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参数资料
| 型号： | LT3837IFE#TRPBF |
| 厂商： | LINEAR TECHNOLOGY CORP |
| 元件分类： | 稳压器 |
| 英文描述： | SWITCHING CONTROLLER, 110 kHz SWITCHING FREQ-MAX, PDSO16 |
| 封装： | 4.40 MM, LEAD FREE, PLASTIC, TSSOP-16 |
| 文件页数： | 14/28页 |
| 文件大小： | 247K |
| 代理商： | LT3837IFE#TRPBF |
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LT3837
21
3837fc
APPLICATIONS INFORMATION
If the output load current is relatively constant, the feedback
resistive divider is used to compensate for these losses.
Otherwise, use the LT3837 load compensation circuitry
(see Load Compensation).
If multiple output windings are used, the yback winding
will have a signal that represents an amalgamation of all
these windings impedances. Take care that you examine
worst-case loading conditions when tweaking the volt-
ages.
Power MOSFET Selection
The power MOSFETs are selected primarily on the criteria of
on-resistance RDS(ON), input capacitance, drain-to-source
breakdown voltage (BVDSS), maximum gate voltage (VGS)
and maximum drain current (ID(MAX)).
For the primary-side power MOSFET, the peak current
is:
I
DC
X
PK
OUT
MAX
MIN
=+
1
2
–
where X is peak-to-peak current ratio as dened earlier.
For each secondary-side power MOSFET, the peak cur-
rent is:
I
DC
X
PK
OUT
MAX
MIN
=+
1
2
–
Select a primary-side power MOSFET with a BVDSS greater
than:
BV
I
L
C
V
N
DSS
PK
LKG
P
IN MAX
OUT MAX
SP
≥+
+
()
where NSP reects the turns ratio of that secondary-to-pri-
mary winding. LLKG is the primary-side leakage inductance
and CP is the primary-side capacitance (mostly from the
COSS of the primary-side power MOSFET). A snubber
may be added to reduce the leakage inductance spike as
discussed earlier.
For each secondary-side power MOSFET, the BVDSSshould
be greater than:
BVDSS ≥ VOUT + VIN(MAX) NSP
Choose the primary side MOSFET RDS(ON) at the nominal
gate drive voltage (7.5V). The secondary side MOSFET
gate drive voltage depends on the gate drive method.
Primary side power MOSFET RMS current is given by:
I
P
VDC
RMSPRI
IN
IN MIN
MAX
=
()
For each secondary-side power MOSFET RMS current is
given by:
I
DC
RMSSEC
OUT
MAX
=
1–
Calculate MOSFET power dissipation next. Because the
primary-side power MOSFET may operate at high VDS, a
transition power loss term is included for accuracy. CMILLER
is the most critical parameter in determining the transition
loss, but is not directly specied on the data sheets.
CMILLER is calculated from the gate charge curve included
on most MOSFET data sheets (Figure 6).
QA
VGS
ab
3825 F06
QB
MILLER EFFECT
GATE CHARGE (QG)
Figure 6. Gate Charge Curve
The at portion of the curve is the result of the Miller
(gate-to-drain) capacitance as the drain voltage drops.
The Miller capacitance is computed as:
C
QQ
V
MILLER
BA
DS
=
–
The curve is done for a given VDS. The Miller capacitance
for different VDS voltages are estimated by multiplying the
computed CMILLER by the ratio of the application VDS to
the curve specied VDS.
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相关代理商/技术参数 |
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|---|---|
| LT383L313 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Optoelectronic |
| LT3844 | 制造商:LINER 制造商全称:Linear Technology 功能描述:High Voltage, Current Mode Switching Regulator Controller with Programmable Operating Frequency |
| LT3844EFE | 制造商:LINER 制造商全称:Linear Technology 功能描述:High Voltage, Current Mode Switching Regulator Controller with Programmable Operating Frequency |
| LT3844EFE#PBF | 功能描述:IC REG CTRLR BST INV PWM 16TSSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 特色产品:LM3753/54 Scalable 2-Phase Synchronous Buck Controllers 标准包装:1 系列:PowerWise® PWM 型:电压模式 输出数:1 频率 - 最大:1MHz 占空比:81% 电源电压:4.5 V ~ 18 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-5°C ~ 125°C 封装/外壳:32-WFQFN 裸露焊盘 包装:Digi-Reel® 产品目录页面:1303 (CN2011-ZH PDF) 其它名称:LM3754SQDKR |
| LT3844EFE#TRPBF | 功能描述:IC REG CTRLR BST INV PWM 16TSSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:500kHz 占空比:96% 电源电压:4 V ~ 36 V 降压:无 升压:是 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:24-WQFN 裸露焊盘 包装:带卷 (TR) |
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