参数资料
型号: LT4356CDE-1#PBF
厂商: Linear Technology
文件页数: 15/26页
文件大小: 0K
描述: IC OVERVOLT PROT REG 12-DFN
产品培训模块: LT4356 Surge Stopper
产品目录绘图: LT4356 Output Graph
LT4356 Series 12-DFN
标准包装: 91
电压 - 工作: 4 ~ 80V
电压 - 箝位: 27V,可调
技术: 混合技术
电路数: 1
应用: 自动
封装/外壳: 12-WFDFN 裸露焊盘
供应商设备封装: 12-DFN(4x3)
包装: 管件
产品目录页面: 2388 (CN2011-ZH PDF)
配用: DC1018B-C-ND - DEMO BOARD FOR LT4356-3
DC1018B-B-ND - DEMO BOARD FOR LT4356-2
DC1018B-A-ND - DEMO BOARD FOR LT4356-1
LT4356-1/LT4356-2
APPLICATIONS INFORMATION
The LTC4356 does not need extra compensation compo-
nents at the GATE pin for stability during an overvoltage or
overcurrent event. With transient input voltage step faster
INPUT
R LIM
*4.7Ω
2N2905A OR
BCP53
10μF
2.5V OUTPUT
≈ 150mA MAX
V OUT 1.25
than 5V/μs, a gate capacitor, C1, to ground is needed to
prevent self enhancement of the N-channel MOSFET.
The extra gate capacitance slows down the turn off time
during fault conditions and may allow excessive current
during an output short event. An extra resistor, R1, in series
R6
100k
D1*
BAV99
LT4356S
11
A OUT
IN +
12
R4
249k
47nF
* OPTIONAL FOR
CURRENT LIMIT
R4 R5
R5
0.7
I LIM
R LIM
with the gate capacitor can improve the turn off time. A
diode, D1, should be placed across R1 with the cathode
4356 F06
R5
249k
connected to C1 as shown in Figure 5.
Q1
D1
IN4148W
R3
R1
Figure 6. Auxiliary LDO Output with Optional Current Limit
Reverse Input Protection
A blocking diode is commonly employed when reverse
input potential is possible, such as in automotive applica-
tions. This diode causes extra power loss, generates heat,
GATE
C1
and reduces the available supply voltage range. During
cold crank, the extra voltage drop across the diode is
V OUT
V IN
LT4356S
4356 F05
Figure 5
Auxiliary Ampli?er
An uncommitted ampli?er is included in the LT4356 to
provide ?exibility in the system design. With the negative
input connected internally to the 1.25V reference, the am-
pli?er can be connected as a level detect comparator with
particularly undesirable.
The LT4356 is designed to withstand reverse voltage
without damage to itself or the load. The V CC , SNS, and
SHDN pins can withstand up to 60V of DC voltage below
the GND potential. Back-to-back MOSFETs must be used
to eliminate the current path through their body diodes
(Figure 7). Figure 8 shows the approach with a P-Channel
MOSFET in place of Q2.
R SNS Q2 Q1
10mΩ IRLR2908 IRLR2908
external hysteresis. The open collector output pin, A OUT ,
is capable of driving an opto or LED. It can also interface
with the system via a pull-up resistor to a supply voltage
up to 80V. Another use is to implement undervoltage
lockout, as shown in the typical application “Overvoltage
Regulator with Undervoltage Lockout.” In shutdown, the
auxiliary ampli?er turns off in the LT4356-1 but continues
12V
D2*
SMAJ58CA
6
D1
1N4148
5
SNS
V CC
Q3
2N3904
R7
10k
R4 R5
10Ω 1M
R3
10Ω
4
3
GATE
OUT
FB
2
12V, 3A
CLAMPED
AT 16V
R1
59k
operating in the LT4356-2.
The ampli?er can also be con?gured as a low dropout
LT4356S
R2
4.99k
SHDN
IN +
linearregulatorcontroller.WithanexternalPNPtransistor,
such as 2N2905A, it can supply up to 100mA of current
with only a few hundred mV of dropout voltage. Current
limit can be easily included by adding two diodes and one
resistor (Figure 6).
7
11
A OUT
12
*DIODES INC.
GND
10
TMR
1
C TMR
0.1μF
FLT
EN
4356 F07
8
9
Figure 7. Overvoltage Regulator with N-channel MOSFET
Reverse Input Protection
4356fa
15
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