参数资料
型号: LTC1473CGN
厂商: Linear Technology
文件页数: 2/16页
文件大小: 0K
描述: IC SWITCH DVR PWRPATH DUAL16SSOP
标准包装: 100
系列: PowerPath™
应用: 手持/移动设备
FET 型: N 沟道
输出数: 2
内部开关:
延迟时间 - 开启: 22µs
延迟时间 - 关闭: 1µs
电源电压: 4.75 V ~ 30 V
电流 - 电源: 100µA
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 16-SSOP(0.154",3.90mm 宽)
供应商设备封装: 16-SSOP
包装: 管件
LTC1473
ABSOLUTE M AXI M U M RATINGS
PACKAGE/ORDER I N FOR M ATIO N
(Note 1)
DCIN, BAT1, BAT2 Supply Voltage .............. – 0.3 to 32V
SENSE + , SENSE – , V + .................................. – 0.3 to 32V
GA1, GB1, GA2, GB2 ................................... – 0.3 to 42V
SAB1, SAB2 ................................................. – 0.3 to 32V
SW, V GG ...................................................... – 0.3 to 42V
IN1, IN2, DIODE ........................................ – 0.3V to 7.5V
Junction Temperature (Note 2) ............................. 125 ° C
IN1 1
IN2 2
DIODE 3
TIMER 4
V + 5
V GG 6
SW 7
TOP VIEW
16 GA1
15 SAB1
14 GB1
13 SENSE +
12 SENSE –
11 GA2
10 SAB2
ORDER PART
NUMBER
LTC1473CGN
LTC1473IGN
GN PART MARKING
Operating Temperature Range
Commercial ............................................. 0 ° C to 70 ° C
Industrial ........................................... – 40 ° C to 85 ° C
Storage Temperature Range ................. – 65 ° C to 150 ° C
Lead Temperature (Soldering, 10 sec).................. 300 ° C
GND 8 9 GB2
GN PACKAGE
16-LEAD NARROW PLASTIC SSOP
T JMAX = 125 ° C, θ JA = 150 ° C/ W
Consult factory for Military grade parts.
1473
1473I
ELECTRICAL CHARACTERISTICS
The q denotes specifications which apply over the full operating temperature range, otherwise specifications are TA = 25 ° C.
Test circuit, V + = 20V, unless otherwise specified.
V IN1 = V DIODE = 5V, V IN2 = 0V, V SENSE = V SENSE = 20V
SYMBOL
V +
I S
PARAMETER
Supply Operating Range
Supply Current
CONDITIONS
+ –
q
MIN
4.75
TYP
100
MAX
30
200
UNITS
V
μ A
V GS
V +UVLO
V +UVLOHYS
V HIDIGIN
V LODIGIN
V GS Gate Supply Voltage
V + Undervoltage Lockout Threshold
V + Undervoltage Lockout Hysteresis
Digital Input Logic High
Digital Input Logic Low
V GS = V GG – V +
V + Ramping Down
q
q
q
7.5
2.7
0.75
2
8.5
3.1
1
1.6
1.5
9.5
3.5
1.25
0.8
V
V
V
V
V
I IN
Input Current
V IN1 = V IN2 = V DIODE = 5V
± 1
μ A
V GS(ON)
V GS(OFF)
I BSENSE +
I BSENSE –
V SENSE
I PDSAB
I TIMER
V TIMER
Gate-to-Source ON Voltage
Gate-to-Source OFF Voltage
SENSE + Input Bias Current
SENSE – Input Bias Current
Inrush Current Limit Sense Voltage
SAB1, SAB2 Pull-Down Current
Timer Source Current
Timer Latch Threshold Voltage
I GA1 = I GA2 = I GB1 = I GB2 = – 1 μ A, V SAB1 = V SAB2 = 20V
I GA1 = I GA2 = I GB1 = I GB2 = 100 μ A, V SAB1 = V SAB2 = 20V
V SENSE + = V SENSE – = 20V
V SENSE + = V SENSE – = 0V (Note 3)
V SENSE + = V SENSE – = 20V
V SENSE + = V SENSE – = 0V (Note 3)
V SENSE – = 20V (V SENSE + – V SENSE – )
V SENSE – = 0V (V SENSE + – V SENSE – )
V IN1 = V IN2 = V DIODE = 0.8V
V IN1 = V IN2 = 0.8V, V DIODE = 2V
V IN1 = 0.8V, V IN2 = V DIODE = 2V, V TIMER = 0V,
V SENSE + – V SENSE – = 300mV
V IN1 = 0.8V, V IN2 = V DIODE = 2V
q
q
q
q
q
q
q
q
q
5.0
2
– 300
2
– 300
0.15
0.10
5
30
3
1.1
5.7
0
4.5
– 160
4.5
– 160
0.20
0.20
20
200
5.5
1.2
7.0
0.4
6.5
– 100
6.5
– 100
0.25
0.30
35
350
9
1.3
V
V
μ A
μ A
μ A
μ A
V
V
μ A
μ A
μ A
V
t ON
t OFF
t D1
t D2
f OVGG
Gate Drive Rise Time
Gate Drive Fall Time
Gate Drive Turn-On Delay
Gate Drive Turn-Off Delay
V GG Regulator Operating Frequency
C GS = 1000pF, V SAB1 = V SAB2 = 0V (Note 4)
C GS = 1000pF, V SAB1 = V SAB2 = 20V (Note 4)
C GS = 1000pF, V SAB1 = V SAB2 = 0V (Note 4)
C GS = 1000pF, V SAB1 = V SAB2 = 20V (Note 4)
33
2
22
1
30
μ s
μ s
μ s
μ s
kHz
2
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