参数资料
型号: LTC1871EMS#TR-1
厂商: LINEAR TECHNOLOGY CORP
元件分类: 稳压器
英文描述: SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PDSO10
封装: PLASTIC, MSOP-10
文件页数: 3/36页
文件大小: 354K
代理商: LTC1871EMS#TR-1
11
LTC1871-1
18711fa
APPLICATIO S I FOR ATIO
WU
UU
As a result, high input voltage applications in which a large
power MOSFET is being driven at high frequencies can
cause the LTC1871-1 to exceed its maximum junction
temperature rating. The junction temperature can be
estimated using the following equations:
IQ(TOT) ≈ IQ + f QG
PIC = VIN (IQ + f QG)
TJ = TA + PIC RTH(JA)
The total quiescent current IQ(TOT) consists of the static
supply current (IQ) and the current required to charge and
discharge the gate of the power MOSFET. The 10-pin
MSOP package has a thermal resistance of RTH(JA) =
120
°C/W.
As an example, consider a power supply with VIN = 5V and
VO = 12V at IO = 1A. The switching frequency is 500kHz,
and the maximum ambient temperature is 70
°C. The
power MOSFET chosen is the IRF7805, which has a
maximum RDS(ON) of 11mΩ (at room temperature) and a
maximum total gate charge of 37nC (the temperature
coefficient of the gate charge is low).
IQ(TOT) = 600μA + 37nC 500kHz = 19.1mA
PIC = 5V 19.1mA = 95mW
TJ = 70°C + 120°C/W 95mW = 81.4°C
This demonstrates how significant the gate charge current
can be when compared to the static quiescent current in
the IC.
To prevent the maximum junction temperature from being
exceeded, the input supply current must be checked when
operating in a continuous mode at high VIN. A tradeoff
between the operating frequency and the size of the power
MOSFET may need to be made in order to maintain a
reliable IC junction temperature. Prior to lowering the
operating frequency, however, be sure to check with
power MOSFET manufacturers for their latest-and-great-
est low QG, low RDS(ON) devices. Power MOSFET manu-
facturing technologies are continually improving, with
newer and better performance devices being introduced
almost yearly.
Output Voltage Programming
The output voltage is set by a resistor divider according to
the following formula:
VV
R
O =+
1 230
1
2
1
.
The external resistor divider is connected to the output as
shown in Figure 1, allowing remote voltage sensing. The
resistors R1 and R2 are typically chosen so that the error
Figure 7. Bypassing the LDO Regulator and Gate Driver Supply
+
+
1.230V
R2
R1
P-CH
5.2V
DRIVER
GATE
CVCC
4.7
μF
CIN
INPUT
SUPPLY
2.5V TO 30V
GND
PLACE AS CLOSE AS
POSSIBLE TO DEVICE PINS
M1
1871 F07
INTVCC
VIN
GND
LOGIC
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