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参数资料
| 型号： | LTC1960CUHF#PBF |
| 厂商： | Linear Technology |
| 文件页数： | 21/28页 |
| 文件大小： | 0K |
| 描述： | IC BATT CHRGR/SELECTR DL 38-QFN |
| 标准包装： | 52 |
| 功能： | 充电管理 |
| 电源电压： | 6 V ~ 28 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 38-WFQFN 裸露焊盘 |
| 供应商设备封装： | 38-QFN（5x7） |
| 包装： | 管件 |
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LTC1960
APPLICATIONS INFORMATION
?I L exceed 0.6(I MAX ) due to limits imposed by IREV and
CA1. Remember the maximum ?I L occurs at the maxi-
mum input voltage. In practice, 10μH is the lowest value
recommended for use.
Charger Switching Power MOSFET and Diode
Selection
Two external power MOSFETs must be selected for use with
the LTC1960 charger: An N-channel MOSFET for the top
(main) switch and an N-channel MOSFET for the bottom
(synchronous) switch.
The peak-to-peak gate drive levels are set by the V CC volt-
age. This voltage is typically 5.2V. Consequently, logic-level
threshold MOSFETs must be used. Pay close attention to
the B VDSS specification for the MOSFETs as well; many of
the logic-level MOSFETs are limited to 30V or less.
Selection criteria for the power MOSFETs include the on-
resistance R DS(ON) , reverse transfer capacitance C RSS ,
input voltage and maximum output current. The LTC1960
charger is always operating in continuous mode so the duty
cycles for the top and bottom MOSFETs are given by:
Main Switch Duty Cycle = V OUT /V IN
Synchronous Switch Duty Cycle = (V IN – V OUT )/V IN
The MOSFET power dissipations at maximum output
current are given by:
P MAIN = V OUT /V IN (I MAX ) 2 (1 + d ? T )R DS(ON) + k(V IN ) 2
(I MAX )(C RSS )(f)
P SYNC = (V IN – V OUT )/V IN (I MAX ) 2 (1 + d ? T ) R DS(ON)
Where d ? T is the temperature dependency of R DS(ON) and
k is a constant inversely related to the gate drive current.
Both MOSFETs have I 2 R losses while the topside N-channel
equation includes an additional term for transition losses,
which are highest at high input voltages. For V IN < 20V,
the high current efficiency generally improves with larger
MOSFETs, while for V IN > 20V the transition losses rapidly
increase to the point that the use of a higher R DS(ON) device
with lower C RSS actually provides higher efficiency. The
synchronous MOSFET losses are greatest at high input
voltage or during a short-circuit when the duty cycle in this
switch is nearly 100%. The term (1 + d ? T ) is generally
given for a MOSFET in the form of a normalized R DS(ON)
vs Temperature curve, but d = 0.005/°C can be used as
an approximation for low voltage MOSFETs. C RSS is usu-
ally specified in the MOSFET characteristics. The constant
k = 1.7 can be used to estimate the contributions of the
two terms in the main switch dissipation equation.
If the LTC1960 charger is to operate in low dropout mode
or with a high duty cycle greater than 85%, then the top-
side N-channel efficiency generally improves with a larger
MOSFET. Using asymmetrical MOSFETs may achieve cost
savings or efficiency gains.
The Schottky diode D1, shown in the Typical Application
on the back page, conducts during the dead-time between
the conduction of the two power MOSFETs. This prevents
the body diode of the bottom MOSFET from turning on and
storing charge during the dead-time, which could cost as
much as 1% in efficiency. A 1A Schottky is generally a good
size for 4A regulators due to the relatively small average
current. Larger diodes can result in additional transition
losses due to their larger junction capacitance. The diode
may be omitted if the efficiency loss can be tolerated.
Calculating IC Power Dissipation
The power dissipation of the LTC1960 is dependent upon the
gate charge of Q TG and Q BG (refer to Typical Application).
The gate charge is determined from the manufacturer’s
data sheet and is dependent upon both the gate voltage
swing and the drain voltage swing of the FET.
P D = (V DCIN – V VCC ) ? [f OSC (Q TG + Q BG ) + I VCC ]
+ V DCIN ? I DCIN
Example: V VCC = 5.2V, V DCIN = 19V, f OSC = 345kHz,
Q G2 = Q G3 = 15nC, I VCC = 0mA.
P D = 165mW
1960fb
21
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