- 您现在的位置：买卖IC网 > PDF目录15972 > LTC1960CUHF#PBF (Linear Technology)IC BATT CHRGR/SELECTR DL 38-QFN PDF资料下载
参数资料
| 型号： | LTC1960CUHF#PBF |
| 厂商： | Linear Technology |
| 文件页数： | 24/28页 |
| 文件大小： | 0K |
| 描述： | IC BATT CHRGR/SELECTR DL 38-QFN |
| 标准包装： | 52 |
| 功能： | 充电管理 |
| 电源电压： | 6 V ~ 28 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 38-WFQFN 裸露焊盘 |
| 供应商设备封装： | 38-QFN（5x7） |
| 包装： | 管件 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页当前第24页第25页第26页第27页第28页
LTC1960
APPLICATIONS INFORMATION
C IN
D1
C OUT
BAT
V IN
I DRIVE is the fixed drive current into the gate from the
LTC1960 and “t” is the time it takes to move that charge
to a new state and change the MOSFET conduction mode.
Hence, time is directly related to Q GATE . Since Q GATE
goes up with MOSFETs of lower R DS(ON) , choosing such
MOSFETs has a counterproductive increase in gate charge
making the MOSFET slower. Please note that the LTC1960
recovery time specification only refers to the time it takes
for the voltage to recover to the level just prior to the
LOW_POWER event as opposed to full voltage.
The single pulse current rating of the MOSFET is important
when a short-circuit takes place. The MOSFET must survive
a 15ms overload. MOSFETs of lower R DS(ON) or MOSFETs
that use more powerful thermal packages will have a high
power surge rating. Using too small of a pulse rating will
allow the MOSFET to blow to the open-circuit condition
instantly like a fuse. Typically there is no outward sign of
failure because it happens so fast. Please measure the
surge current for all discharge power paths under worse
case conditions and consult the MOSFET data sheet for
the limitations. Voltage sources with the highest voltage
and the most bulk capacitance are often the biggest risk.
Specifically the MOSFETs in the wall adapter path with wall
adapters of high voltage, large bulk capacitance and low
resistance DC cables between the adapter and device are
the most common failures. Remember to only use the real
wall adapter with a production DC power cord when per-
forming the wall adapter path test. The use of a laboratory
power supply is unrealistic for this test and will force you
to over specify the MOSFET ratings. A battery pack usu-
ally has enough series resistance to limit the peak current
or are too low in voltage to create enough instantaneous
power to damage their respective PowerPath MOSFETs.
The highest frequency switching loop has the highest
layout priority. For best results, avoid using vias in this
loop and keep the entire high frequency loop on a single
external PCB layer. If you must, use multiple vias to keep
the impedance down (see Figure 9).
SWITCH NODE
L1
V BAT
HIGH
FREQUENCY
CIRCULATING
PATH
1960 F09
Figure 9. High Speed Switching Path
2. Run long power traces in parallel. Best results are
achieved if you run each trace on separate PCB layer one
on top of the other for maximum capacitance coupling
and common mode noise rejection.
3. If possible, use a ground plane under the switcher
circuitry to minimize capacitive interplane noise cou-
pling.
4. Keep signal or analog ground separate. Tie this analog
ground back to the power supply at the output ground
using a single point connection.
5. For best current programming accuracy provide a Kelvin
connection from R SENSE to CSP and CSN. See Figure 10
as an example.
DIRECTION OF CHARGING CURRENT
PCB Layout Considerations
For maximum efficiency, the switch node rise and fall
time is kept as short as possible. To prevent magnetic
and electrical field radiation and high frequency resonant
problems, proper layout of the components connected to
the IC is essential.
CSP
R SNS
CSN
1960 F10
1. Keep the highest frequency loop path as small and
tight as possible. This includes the bypass capacitors,
with the higher frequency capacitors being closer to
the noise source than the lower frequency capacitors.
24
Figure 10. Kelvin Sensing of Charging Current
1960fb
相关PDF资料 |
PDF描述 |
|---|---|
| RCM22DRKI | CONN EDGECARD 44POS DIP .156 SLD |
| HCC06DRTN-S734 | CONN EDGECARD 12POS DIP .100 SLD |
| RCM18DRAN | CONN EDGECARD 36POS R/A .156 SLD |
| RP10-483.3SEW/P | CONV DC/DC 10W 18-75VIN 3.3VOUT |
| RCM18DRAH | CONN EDGECARD 36POS R/A .156 SLD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| LTC1966CMS8 | 功能描述:IC PREC RMS/DC CONV MCRPWR 8MSOP RoHS:否 类别:集成电路 (IC) >> PMIC - RMS 至 DC 转换器 系列:- 标准包装:46 系列:- 电流 - 电源:1.2mA 电源电压:±18 V，36 V 安装类型:表面贴装 封装/外壳:16-SOIC（0.295"，7.50mm 宽） 供应商设备封装:16-SOIC W 包装:管件 |
| LTC1966CMS8#PBF | 功能描述:IC PREC RMS/DC CONV MCRPWR 8MSOP RoHS:是 类别:集成电路 (IC) >> PMIC - RMS 至 DC 转换器 系列:- 标准包装:46 系列:- 电流 - 电源:1.2mA 电源电压:±18 V，36 V 安装类型:表面贴装 封装/外壳:16-SOIC（0.295"，7.50mm 宽） 供应商设备封装:16-SOIC W 包装:管件 |
| LTC1966CMS8#TR | 功能描述:IC PREC RMS/DC CONV MCRPWR 8MSOP RoHS:否 类别:集成电路 (IC) >> PMIC - RMS 至 DC 转换器 系列:- 标准包装:46 系列:- 电流 - 电源:1.2mA 电源电压:±18 V，36 V 安装类型:表面贴装 封装/外壳:16-SOIC（0.295"，7.50mm 宽） 供应商设备封装:16-SOIC W 包装:管件 |
| LTC1966CMS8#TRPBF | 功能描述:IC PREC RMS/DC CONV MCRPWR 8MSOP RoHS:是 类别:集成电路 (IC) >> PMIC - RMS 至 DC 转换器 系列:- 标准包装:46 系列:- 电流 - 电源:1.2mA 电源电压:±18 V，36 V 安装类型:表面贴装 封装/外壳:16-SOIC（0.295"，7.50mm 宽） 供应商设备封装:16-SOIC W 包装:管件 |
| LTC1966CMS8PBF | 制造商:Linear Technology 功能描述:RMS-to-DC Converter Prec. uPower MSOP8 |
发布紧急采购，3分钟左右您将得到回复。