参数资料
型号: LTC3409EDD#PBF
厂商: Linear Technology
文件页数: 3/16页
文件大小: 0K
描述: IC REG BUCK SYNC ADJ 0.6A 8DFN
标准包装: 121
类型: 降压(降压)
输出类型: 可调式
输出数: 1
输出电压: 0.62 V ~ 5.5 V
输入电压: 1.6 V ~ 5.5 V
PWM 型: 电流模式,混合
频率 - 开关: 1.7MHz ~ 2.6MHz
电流 - 输出: 600mA
同步整流器:
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-WFDFN 裸露焊盘
包装: 管件
供应商设备封装: 8-DFN-EP(3x3)
产品目录页面: 1334 (CN2011-ZH PDF)
LTC3409
ELECTRICAL CHARACTERISTICS
The ● denotes speci?cations which apply over the full operating
temperature range, otherwise speci?cations are T A = 25°C. V IN = 2.2V unless otherwise speci?ed.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
I S
Input DC Bias Current
(Note 5)
Active Mode
Sleep Mode
Shutdown
V OUT = 90%, I LOAD = 0A
V OUT = 103%, I LOAD = 0A
V RUN = 0V, V IN = 5.5V
350
65
0.1
475
120
1
μA
μA
μA
f OSC
Nominal Oscillator Frequency
SYNC = GND
SYNC = V IN
0.9
1.8
1.7
2.6
2.1
3.0
MHz
MHz
SYNC TH
SYNC f MIN
SYNC f MAX
SYNC PW
t SS
SYNC t O
SYNC Threshold
Minimum SYNC Pin Frequency
Maximum SYNC Pin Frequency
Minimum SYNC Pulse Width
Soft-Start Period
SYNC Timeout
When SYNC Input is Toggling (Note 7)
RUN ↑
Delay from Removal of EXT CLK Until Fixed
0.63
1
3
100
1
30
V
MHz
MHz
ns
ms
μs
Frequency Operation Begins (Note 7)
R PFET
R NFET
R DS(ON) of P-Channel FET
R DS(ON) of N-Channel FET
I SW = 100mA, Wafer Level
I SW = 100mA, DD Package
I SW = 100mA, Wafer Level
I SW = 100mA, DD Package
0.33
0.35
0.22
0.25
Ω
Ω
Ω
Ω
I LSW
SW Leakage
V RUN = 0V, V SW = 0V or 5V, V IN = 5V
±0.1
±3
μA
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3409E is guaranteed to meet performance speci?cations
from 0°C to 70°C. Speci?cations over the –40°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls. The LTC3409I is guaranteed to meet
speci?ed performance over the full –40°C to 85°C operating temperature
range.
Note 3: T J is calculated from the ambient temperature T A and power
dissipation P D according to the following formula:
This IC includes overtemperature protection that is intended to protect the
device during momentary overload conditions. Overtemperature protection
becomes active at a junction temperature greater than the maximum
operating junction temperature. Continuous operation above the speci?ed
maximum operating junction temperature may impair device reliability.
Note 4: The LTC3409 is tested in a proprietary test mode that connects V FB
to the output of the error ampli?er.
Note 5: Dynamic supply current is higher due to the gate charge being
delivered at the switching frequency.
Note 6: ΔV OVL is the amount V FB must exceed the regulated feedback
voltage.
Note 7: Determined by design, not production tested.
LTC3409: T J = T A + (P D )(43°C/W)
3409fc
3
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