参数资料
型号: LTC3736-2EGN#PBF
厂商: LINEAR TECHNOLOGY CORP
元件分类: 稳压器
英文描述: SWITCHING CONTROLLER, PDSO24
封装: 0.150 INCH, LEAD FREE, PLASTIC, SSOP-24
文件页数: 7/28页
文件大小: 344K
代理商: LTC3736-2EGN#PBF
LTC3736-2
15
37362fb
The MOSFET power dissipations at maximum output
current are:
P
V
IR
V
I
TOP
OUT
IN
OUT MAX
T
DS ON
IN
=+
()
(
)
22
2
ρ
O
OUT MAX
RSS
OSC
BOT
IN
OUT
IN
OUT MA
Cf
P
VV
V
I
()
(
=
X
T
DS ON
R
)(
)
2
ρ
Both MOSFETs have I2R losses and the PTOP equation
includes an additional term for transition losses, which are
largest at high input voltages. The bottom MOSFET losses
are greatest at high input voltage or during a short-circuit
when the bottom duty cycle is nearly 100%.
The LTC3736-2 utilizes a nonoverlapping, antishoot-
through gate drive control scheme to ensure that the
P- and N-channel MOSFETs are not turned on at the same
time. To function properly, the control scheme requires
that the MOSFETs used are intended for DC/DC switching
applications. Many power MOSFETs, particularly P-channel
MOSFETs, are intended to be used as static switches and
therefore are slow to turn on or off.
Reasonable starting criteria for selecting the P-channel
MOSFET are that it must typically have a gate charge (QG)
Figure 4. RDS(ON) vs Temperature
JUNCTION TEMPERATURE (°C)
–50
TNORMALIZED
ON
RESISTANCE
1.0
1.5
150
37362 F04
0.5
0
50
100
2.0
less than 25nC to 30nC (at 4.5VGS) and a turn-off delay
(tD(OFF)) of less than approximately 140ns. However, due
to differences in test and specication methods of various
MOSFET manufacturers, and in the variations in QG and
tD(OFF) withgatedrive(VIN)voltage,theP-channelMOSFET
ultimately should be evaluated in the actual LTC3736-2
application circuit to ensure proper operation.
Shoot-through between the P-channel and N-channel
MOSFETs can most easily be spotted by monitoring the
input supply current. As the input supply voltage increases,
if the input supply current increases dramatically, then the
likely cause is shoot-through. Note that some MOSFETs
that do not work well at high input voltages (e.g., VIN >
5V) may work ne at lower voltages (e.g., 3.3V). Table 1
shows a selection of P-channel MOSFETs from different
manufacturers that are known to work well in LTC3736-2
applications.
Selecting the N-channel MOSFET is typically easier, since for
a given RDS(ON), the gate charge and turn-on and turn-off
delays are much smaller than for a P-channel MOSFET.
Table 1. Selected P-Channel MOSFETs Suitable for LTC3736-2
Applications
PART
NUMBER
MANUFACTURER
TYPE
PACKAGE
Si7540DP
Siliconix
Complementary
P/N
PowerPak
SO-8
Si9801DY
Siliconix
Complementary
P/N
SO-8
FDW2520C
Fairchild
Complementary
P/N
TSSOP-8
FDW2521C
Fairchild
Complementary
P/N
TSSOP-8
Si3447BDV
Siliconix
Single P
TSOP-6
Si9433BDY
Siliconix
Single P
SO-8
FDC602P
Fairchild
Single P
TSOP-6
FDC606P
Fairchild
Single P
TSOP-6
FDC638P
Fairchild
Single P
TSOP-6
FDW2502P
Fairchild
Dual P
TSSOP-8
FDS6875
Fairchild
Dual P
SO-8
HAT1054R
Hitachi
Dual P
SO-8
NTMD6P02R2-D On Semiconductor
Dual P
SO-8
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