参数资料
型号: LTC3785EUF#PBF
厂商: Linear Technology
文件页数: 4/20页
文件大小: 0K
描述: IC REG CTRLR BST PWM VM 24-QFN
标准包装: 91
PWM 型: 电压模式
输出数: 2
频率 - 最大: 1MHz
占空比: 99%
电源电压: 2.7 V ~ 10 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 85°C
封装/外壳: 24-WFQFN 裸露焊盘
包装: 管件
产品目录页面: 1336 (CN2011-ZH PDF)
LTC3785
ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating junction
temperature range, otherwise specifications are at T A = 25°C. V IN = I SVOUT = V DRV = V BST1 = V BST2 = 3.6V, R T = 49.9k, R ILSET = 59k.
PARAMETER
BG1, BG2 Rise Time
TG1, TG2 Fall Time
BG1, BG2 Fall Time
Buck Driver Nonoverlap Time
Boost Driver Nonoverlap Time
CONDITIONS
C LOAD = 3300pF (Note 3)
C LOAD = 3300pF (Note 3)
C LOAD = 3300pF (Note 3)
TG1 to BG1
TG2 to BG2
MIN
TYP
20
20
20
100
100
MAX
UNITS
ns
ns
ns
ns
ns
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3785E is guaranteed to meet performance specifications
from 0°C to 85°C. Specifications over the –40°C to 85°C operating
junction temperature range are assured by design, characterization and
correlation with statistical process controls. The LTC3785I is guaranteed
to meet performance specifications over the full –40°C to 125°C operating
junction temperature range.
Note 3: Specification is guaranteed by design and not 100% tested in
production.
Note 4: Current measurements are performed when the outputs are not
switching.
Note 5: The IC is tested in a feedback loop to make the measurement.
TYPICAL PERFORMANCE CHARACTERISTICS
T A = 25°C, unless otherwise noted.
Li-Ion to 3.3V Efficiency
vs Load Current
Two Li-Ion to 7V Efficiency
vs Load Current
Li-Ion/9V to 5V V OUT Efficiency
vs Load Current
100
90
80
Burst Mode
OPERATION
100
90
80
Burst Mode
OPERATION
100
90
80
Burst Mode
OPERATION
70
60
50
40
30
20
10
0
0.0001
0.001
FIXED
FREQUENCY
V IN = 4.2V
V IN = 3.6V
V IN = 3V
MOSFET Si7940
L = 4.7 μ H WURTH WE-PD
f OSC = 500kHz
0.01 0.1 1 10
70
60
50
40
30
20
10
0
0.0001
0.001
FIXED
FREQUENCY
V IN = 8.4V
V IN = 7.2V
V IN = 5.4V
MOSFET Si7940
L = 5.6 μ H MSS1260
f OSC = 430kHz
0.01 0.1 1 10
70
60
50
40
30
20
10
0
0.0001
0.001
FIXED
FREQUENCY
V IN = 9V
V IN = 4.2V
V IN = 3.6V
V IN = 2.7V
MOSFET Si7940
L = 5.6 μ H MSS1260
f OSC = 430kHz
0.01 0.1 1 10
V OUT
50mV/DIV
AC
COUPLED
INDUCTOR
CURRENT
1A/DIV
LOAD CURRENT (A)
Burst Mode Ripple
3785 G01
V OUT
500mV/
DIV
V IN
3V TO
8.5V
LOAD CURRENT (A)
Line Transient Response
3785 G02
V OUT
200mV/
DIV
I LOAD
10mA TO 2A
LOAD CURRENT (A)
V OUT Load Transient
3785 G03
V OUT = 3.3V
C OUT = 100μF
5μs/DIV
3785 G04
I LOAD = 300mA
V OUT = 5V
C OUT = 100μF
500μs/DIV
3785 G05
V IN = 3.6V
V OUT = 3.3V
C OUT = 100μF
100μs/DIV
3785 G06
3785fc
 
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