参数资料
型号: LTC3786EUD#PBF
厂商: Linear Technology
文件页数: 4/34页
文件大小: 0K
描述: IC REG CTRLR BST PWM CM 16-QFN
标准包装: 121
PWM 型: 电流模式
输出数: 1
频率 - 最大: 850kHz
占空比: 100%
电源电压: 4.5 V ~ 38 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 125°C
封装/外壳: 16-WFQFN 裸露焊盘
包装: 管件
LTC3786
ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating
temperature r ange,   otherwise specifications are at T A = 25°C. V BIAS = 12V, unless otherwise noted (Note 2).
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
INTV CC Linear Regulator
V INTVCC(VIN)
V LDO INT
Internal V CC Voltage
INTV CC Load Regulation
6V < VBIAS < 38V
I CC = 0mA to 50mA
5.2
5.4
0.5
5.6
2
V
%
Oscillator and Phase-Locked Loop
f PROG
f LOW
f HIGH
Programmable Frequency
Lowest Fixed Frequency
Highest Fixed Frequency
R FREQ = 25k
R FREQ = 60k
R FREQ = 100k
V FREQ = 0V
V FREQ = INTV CC
335
320
485
105
400
760
350
535
465
380
585
kHz
kHz
kHz
kHz
kHz
f SYNC
Synchronizable Frequency
PLLIN/MODE = External Clock
l
75
850
kHz
PGOOD Output
V PGL
I PGOOD
PGOOD Voltage Low
PGOOD Leakage Current
I PGOOD = 2mA
V PGOOD = 5V
0.2
0.4
±1
V
μA
V PG
t PGOOD(DELAY)
PGOOD Trip Level
PGOOD Delay
V FB with Respect to Set Regulated Voltage
V FB Ramping Negative
Hysteresis
V FB Ramping Positive
Hysteresis
PGOOD Going High to Low
–12
8
–10
2.5
10
2.5
25
–8
12
%
%
%
%
μs
BOOST Charge Pump
I BOOST
BOOST Charge Pump Available
Output Current
V SW = 12V; V BOOST – V SW = 4.5V;
FREQ = 0V, Forced Continuous or
Pulse-Skipping Mode
85
μA
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3786 is tested under pulsed load conditions such that
T J ≈ T A . The LTC3786E is guaranteed to meet specifications from
0°C to 85°C junction temperature. Specifications over the –40°C to
125°C operating junction temperature range are assured by design,
characterization and correlation with statistical process controls. The
LTC3786I is guaranteed over the –40°C to 125°C operating junction
temperature range. Note that the maximum ambient temperature
consistent with these specifications is determined by specific operating
conditions in conjunction with board layout, the rated package thermal
impedance and other environmental factors. The junction temperature
(T J in °C) is calculated from the ambient temperature (T A in °C) and power
dissipation (P D in Watts) according to the formula:
Note 3: This IC includes overtemperature protection that is intended to
protect the device during momentary overload conditions. The maximum
rated junction temperature will be exceeded when this protection is active.
Continuous operation above the specified absolute maximum operating
junction temperature may impair device reliability or permanently damage
the device.
Note 4: The LTC3786 is tested in a feedback loop that servos V FB to the
output of the error amplifier while maintaining I TH at the midpoint of the
current limit range.
Note 5: Dynamic supply current is higher due to the gate charge being
delivered at the switching frequency.
Note 6: Rise and fall times are measured using 10% and 90% levels. Delay
times are measured using 50% levels.
Note 7: see Minimum On-Time Considerations in the Applications
Information section.
T J = T A + (P D ? θ JA )
where θ JA = 68°C for the QFN package and θ JA = 40°C for the MSOP
package.
3786fa
4
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