参数资料
型号: LTC3822EMSE#TRPBF
厂商: Linear Technology
文件页数: 11/20页
文件大小: 0K
描述: IC REG CTRLR BUCK PWM CM 10-MSOP
标准包装: 2,500
PWM 型: 电流模式
输出数: 1
频率 - 最大: 850kHz
占空比: 99%
电源电压: 2.75 V ~ 4.5 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 85°C
封装/外壳: 10-TFSOP,10-MSOP(0.118",3.00mm 宽)裸露焊盘
包装: 带卷 (TR)
LTC3822
APPLICATIONS INFORMATION
2.0
1.5
1.0
0.5
are greatest at high input voltage or during a short-circuit
when the bottom duty cycle is 100%.
The LTC3822 utilizes a non-overlapping, anti-shoot-
through gate drive control scheme to ensure that the
MOSFETs are not turned on at the same time. To function
properly, the control scheme requires that the MOSFETs
used are intended for DC/DC switching applications. Many
power MOSFETs are intended to be used as static switches
and therefore are slow to turn on or off.
0
–50
0
50
100
150
Reasonable starting criteria for selecting the MOSFETs
JUNCTION TEMPERATURE (°C)
3822 F02
Figure 2. R DS(ON) vs Temperature
The power dissipated in the MOSFETs strongly depends
on their respective duty cycles and load current. When the
LTC3822 is operating in continuous mode, the duty cycles
for the MOSFETs are:
are that they must typically have a gate charge (Q G ) less
than 30nC (at 2.5V GS ) and a turn-off delay (t D(OFF) ) of less
than approximately 140ns. However, due to differences
in test and speci?cation methods of various MOSFET
manufacturers, and in the variations in Q G and t D(OFF) with
gate drive (V IN ) voltage, the MOSFETs ultimately should
be evaluated in the actual LTC3822 application circuit to
ensure proper operation.
Top MOSFET Duty Cycle =
V OUT
V IN
Shoot-through between the MOSFETs can most easily
be spotted by monitoring the input supply current. As
the input supply voltage increases, if the input supply
Bottom MOSFET Duty Cycle =
V IN – V OUT
V IN
current increases dramatically, then the likely cause is
shoot-through.
The MOSFET power dissipations at maximum output
current are:
Operating Frequency
The choice of operating frequency, f OSC , is a trade-off
P TOP =
V OUT
V IN
?I OUT(MAX) 2 ? ρ T ? R DS(ON) + 2 ? V IN 2
between ef?ciency and component size. Low frequency
operation improves ef?ciency by reducing MOSFET
switching losses, both gate charge loss and transition
? I OUT(MAX) ? C RSS ? f
loss. However, lower frequency operation requires more
P BOT =
V IN – V OUT
V IN
?I OUT(MAX) 2 ? ρ T ? R DS(ON)
inductance for a given amount of ripple current.
The internal oscillator for the LTC3822’s controller runs
at a nominal 550kHz frequency when the FREQ pin is left
Both MOSFETs have I 2 R losses and the P TOP equation
includes an additional term for transition losses, which are
?oating. Pulling FREQ to V IN selects 750kHz operation;
pulling FREQ to GND selects 300kHz operation.
largest at high input voltages. The bottom MOSFET losses
3822fa
11
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