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参数资料
| 型号： | LTC3832-1ES8#TR |
| 厂商： | Linear Technology |
| 文件页数： | 13/24页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM VM 8-SOIC |
| 标准包装： | 2,500 |
| PWM 型： | 电压模式 |
| 输出数： | 1 |
| 频率 - 最大： | 360kHz |
| 占空比： | 95% |
| 电源电压： | 3 V ~ 8 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
LTC3832/LTC3832-1
APPLICATIO S I FOR ATIO
Diagram). This increases the G2 on-time and allows the
charge pump capacitors to be refreshed.
For applications using an external supply to PV CC1 , this
supply must also be higher than V CC by at least 2.5V to
ensure normal operation.
For applications with a 5V or higher V IN supply, PV CC2 can
be tied to V IN if a logic level MOSFET is used. PV CC1 can be
supplied using a doubling charge pump as shown in
Figure 9. This circuit provides 2V IN – V F to PV CC1 while Q1
is ON.
V IN
enhance standard power MOSFETs. Under this condition,
the effective MOSFET R DS(ON) may be quite high, raising
the dissipation in the FETs and reducing efficiency. Logic
level FETs are the recommended choice for 5V or lower
voltage systems. Logic level FETs can be fully enhanced
with a doubler/tripling charge pump and will operate at
maximum efficiency.
After the MOSFET threshold voltage is selected, choose the
R DS(ON) based on the input voltage, the output voltage,
allowable power dissipation and maximum output current.
In a typical LTC3832 circuit, operating in continuous mode,
the average inductor current is equal to the output load
DC ( Q 1 ) =
OPTIONAL
USE FOR V IN ≥ 7V
D Z
12V
1N5242
PV CC2
PV CC1
G1
MBR0530T1
0.1 μ F
Q1
current. This current flows through either Q1 or Q2 with the
power dissipation split up according to the duty cycle:
V OUT
V IN
DC ( Q 2 ) = 1 – OUT = IN OUT
G2
Q2
L O
+
V OUT
C OUT
V V – V
V IN V IN
LTC3832
3832 F09
The R DS(ON) required for a given conduction loss can now
be calculated by rearranging the relation P = I 2 R.
Figure 9. Doubling Charge Pump
Power MOSFETs
R DS ( ON ) Q 1 =
P MAX ( Q 1 )
DC ( Q 1 ) ? ( I LOAD
) 2
=
V IN ? P MAX ( Q 1 )
V OUT ? ( I LOAD ) 2
Two N-channel power MOSFETs are required for most
LTC3832 circuits. These should be selected based
primarily on threshold voltage and on-resistance consid-
R DS ( ON ) Q 2 =
P MAX ( Q 2 )
DC ( Q 2 ) ? ( I LOAD ) 2
=
V IN ? P MAX ( Q 2 )
( V IN – V OUT ) ? ( I LOAD ) 2
R DS ( ON ) Q 1 =
= 0 . 011 ?
R DS ( ON ) Q 2 = = 0 . 034 ?
erations. Thermal dissipation is often a secondary con-
cern in high efficiency designs. The required MOSFET
threshold should be determined based on the available
power supply voltages and/or the complexity of the gate
drive charge pump scheme. In 3.3V input designs where
an auxiliary 12V supply is available to power PV CC1 and
PV CC2 , standard MOSFETs with R DS(ON) specified at V GS
= 5V or 6V can be used with good results. The current
drawn from this supply varies with the MOSFETs used
and the LTC3832’s operating frequency, but is generally
less than 50mA.
LTC3832 applications that use 5V or lower V IN voltage and
a doubling/tripling charge pump to generate PV CC1 and
PV CC2 , do not provide enough gate drive voltage to fully
P MAX should be calculated based primarily on required
efficiency or allowable thermal dissipation. A typical high
efficiency circuit designed for 3.3V input and 2.5V at 10A
output might allow no more than 3% efficiency loss at full
load for each MOSFET. Assuming roughly 90% efficiency
at this current level, this gives a P MAX value of:
(2.5V)(10A/0.9)(0.03) = 0.83W per FET
and a required R DS(ON) of:
( 3 . 3 V ) ? ( 0 . 83 W )
( 2 . 5 V )( 10 A ) 2
( 3 . 3 V ) ? ( 0 . 83 W )
( 3 . 3 V – 2 . 5 V )( 10 A ) 2
sn3832 3832fs
13
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| LTC3832EGN | 功能描述:IC REG CTRLR BUCK PWM VM 16-SSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:500kHz 占空比:96% 电源电压:4 V ~ 36 V 降压:无 升压:是 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:24-WQFN 裸露焊盘 包装:带卷 (TR) |
| LTC3832EGN#PBF | 功能描述:IC REG CTRLR BUCK PWM VM 16-SSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:500kHz 占空比:96% 电源电压:4 V ~ 36 V 降压:无 升压:是 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:24-WQFN 裸露焊盘 包装:带卷 (TR) |
| LTC3832EGN#TR | 功能描述:IC REG CTRLR BUCK PWM VM 16-SSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:500kHz 占空比:96% 电源电压:4 V ~ 36 V 降压:无 升压:是 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:24-WQFN 裸露焊盘 包装:带卷 (TR) |
| LTC3832EGN#TRPBF | 功能描述:IC REG CTRLR BUCK PWM VM 16-SSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:500kHz 占空比:96% 电源电压:4 V ~ 36 V 降压:无 升压:是 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:24-WQFN 裸露焊盘 包装:带卷 (TR) |
| LTC3832EG-T | 制造商:LINEAR TECHNOLOGY CORPORA 功能描述: 制造商:LINTEC 功能描述: |
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