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参数资料
| 型号： | LTC3832-1ES8#TRPBF |
| 厂商： | Linear Technology |
| 文件页数： | 3/24页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM VM 8-SOIC |
| 标准包装： | 2,500 |
| PWM 型： | 电压模式 |
| 输出数： | 1 |
| 频率 - 最大： | 360kHz |
| 占空比： | 95% |
| 电源电压： | 3 V ~ 8 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
LTC3832/LTC3832-1
ELECTRICAL CHARACTERISTICS The q denotes specifications that apply over the full operating temperature
range, otherwise specifications are at T A = 25 ° C. V CC , PV CC1 , PV CC2 = 5V, unless otherwise noted. (Note 2)
SYMBOL
I VCC
I PVCC
PARAMETER
Supply Current
PV CC Supply Current
CONDITIONS
Figure 2, V SHDN = V CC
V SHDN = 0V
Figure 2, V SHDN = V CC (Note 3)
V SHDN = 0V
q
q
q
q
MIN
TYP
0.7
1
20
0.1
MAX
1.6
10
30
10
UNITS
mA
μ A
mA
μ A
f OSC
Internal Oscillator Frequency
FREQSET Floating
q
230
300
360
kHz
V SAWL
V SAWH
V COMP at Minimum Duty Cycle
V COMP at Maximum Duty Cycle
1.2
2.2
V
V
V COMPMAX
Maximum V COMP
V FB = 0V, PV CC1 = 8V
2.85
V
? f OSC / ? I FREQSET Frequency Adjustment
10
kHz/ μ A
A V
Error Amplifier Open-Loop DC Gain
Measured from FB to COMP,
SENSE + and SENSE – Floating, (Note 4)
q
50
65
dB
g m
Error Amplifier Transconductance
Measured from FB to COMP,
SENSE + and SENSE – Floating, (Note 4)
q
1600
2000
2400
μ mho
I COMP
Error Amplifier Output Sink/Source Current
100
μ A
I MAX
I MAX Sink Current
V IMAX = V CC
(Note 10)
q
8
4
12
12
16
20
μ A
μ A
I MAX Sink Current Tempco
V IMAX = V CC (Note 6)
3300
ppm/ ° C
V IH
V IL
SHDN Input High Voltage
SHDN Input Low Voltage
q
q
2.4
0.8
V
V
I IN
SHDN Input Current
V SHDN = V CC
q
0.1
1
μ A
I SS
Soft-Start Source Current
V SS = 0V, V IMAX = 0V, V IFB = V CC
q
–8
–12
–18
μ A
I SSIL
Maximum Soft-Start Sink Current
V IMAX = V CC , V IFB = 0V,
1.6
mA
In Current Limit
V SS = V CC (Note 8), PV CC1 = 8V
R SENSE
R SENSEFB
SENSE Input Resistance
SENSE to FB Resistance
23.7
18
k ?
k ?
t r , t f
Driver Rise/Fall Time
Figure 2, PV CC1 = PV CC2 = 5V (Note 5)
q
80
250
ns
t NOV
DC MAX
Driver Nonoverlap Time
Maximum G1 Duty Cycle
Figure 2, PV CC1 = PV CC2 = 5V (Note 5)
Figure 2, V FB = 0V (Note 5), PV CC1 = 8V
q
q
25
91
120
95
250
ns
%
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: All currents into device pins are positive; all currents out of device
pins are negative. All voltages are referenced to ground unless otherwise
specified.
Note 3: Supply current in normal operation is dominated by the current
needed to charge and discharge the external FET gates. This will vary with
the LTC3832 operating frequency, operating voltage and the external FETs
used.
Note 4: The open-loop DC gain and transconductance from the SENSE +
and SENSE – pins to COMP pin will be (A V )(0.6/2.5) and (g m )(0.6/2.5)
respectively.
Note 5: Rise and fall times are measured using 10% and 90% levels. Duty
cycle and nonoverlap times are measured using 50% levels.
Note 6: Guaranteed by design, not subject to test.
Note 7: PV CC1 must be higher than V CC by at least 2.5V for G1 to operate
at 95% maximum duty cycle and for the current limit protection circuit to
be active.
Note 8: The current limiting amplifier can sink but cannot source current.
Under normal (not current limited) operation, the output current will be
zero.
Note 9: The LTC3832E/LTC3832-1E are guaranteed to meet performance
specifications from 0 ° C to 70 ° C. Specifications over the –40 ° C to 85 ° C
operating temperature range are assured by design, characterization and
correlation with statistical process controls.
Note 10: The minimum and maximum limits for I MAX over temperature
includes the intentional temperature coefficient of 3300ppm/ ° C. This
induced temperature coefficient counteracts the typical temperature
coefficient of the external power MOSFET on-resistance. This results in a
relatively flat current limit over temperature for the application.
sn3832 3832fs
3
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