参数资料
型号: LTC3865IFE#TRPBF
厂商: Linear Technology
文件页数: 5/38页
文件大小: 0K
描述: IC REG CTRLR BUCK PWM CM 38TSSOP
标准包装: 2,000
系列: PolyPhase®
PWM 型: 电流模式
输出数: 2
频率 - 最大: 880kHz
占空比: 95%
电源电压: 4.5 V ~ 38 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 125°C
封装/外壳: 38-TFSOP (0.173",4.40mm 宽)裸露焊盘
包装: 带卷 (TR)
LTC3865/LTC3865-1
ELECTRICAL CHARACTERISTICS The l denotes the speci?cations which apply over the full operating
junction temperature range, otherwise speci?cations are at T A = 25°C (Note 2). V IN = 15V, V RUN1,2 = 5V unless otherwise noted.
SYMBOL
BG R DOWN
PARAMETER
BG Driver Pull-Down On-Resistance
CONDITIONS
BG Low
MIN
TYP
1.4
MAX
UNITS
Ω
TG1,2 t r
TG Transition Time:
(Note 6)
TG1,2 t f
BG1,2 t r
BG1,2 t f
TG/BG t 1D
Rise Time
Fall Time
BG Transition Time:
Rise Time
Fall Time
Top Gate Off to Bottom Gate On Delay
C LOAD = 3300pF
C LOAD = 3300pF
(Note 6)
C LOAD = 3300pF
C LOAD = 3300pF
C LOAD = 3300pF Each Driver
25
25
25
25
30
ns
ns
ns
ns
ns
Synchronous Switch-On Delay Time
BG/TG t 2D
Bottom Gate Off to Top Gate On Delay
C LOAD = 3300pF Each Driver
30
ns
Top Switch-On Delay Time
t ON(MIN)
Minimum On-Time
(Note 7)
90
ns
INTV CC Linea r Regulator
V INTVCC
V LDO INT
Internal V CC Voltage
INTV CC Load Regulation
6V < V IN < 38V
I CC = 0mA to 20mA
4.8
5.0
0.5
5.2
2
V
%
V EXTVCC
V LDO EXT
EXTV CC Switchover Voltage
EXTV CC Voltage Drop
EXTV CC Ramping Positive
I CC = 20mA, V EXTVCC = 5V
l
4.5
4.7
50
100
V
mV
V LDOHYS
EXTV CC Hysteresis
200
mV
Oscillator an d Phase-Locked Loop
f NOM
f LOW
f HIGH
Nominal Frequency
Lowest Frequency
Highest Frequency
R FREQ = 162k
R FREQ = 0Ω
R FREQ ≥ 325k
450
210
650
500
250
770
550
290
880
kHz
kHz
kHz
R MODE/PLLIN MODE/PLLIN Input Resistance
250
I FREQ
Frequency Setting Current
V FREQ = 1.22V
6.5
7.5
8.5
μA
PGOOD OUTPUT
V PGL
I PGOOD
PGOOD Voltage Low
PGOOD Leakage Current
I PGOOD = 2mA
V PGOOD = 5V
0.1
0.3
±2
V
μA
V PG
PGOOD Trip Level
V OSENSE with Respect to Set Regulated Voltage
VID11 = VID12 = VID21 = VID22 = Float
V OSENSE Ramping Negative
V OSENSE Ramping Postitive
–7
7
–10
10
–12.5
12.5
%
%
t PG
PGOOD Bad Blanking Time
Measured from VID Transitition Edge
100
μs
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3865/LTC3865-1 are tested under pulsed load conditions
such that T J ≈ T A . The LTC3865E/LTC3865E-1 are guaranteed to meet
performance speci?cations over the 0°C to 85°C operating junction
temperature range. Speci?cations over the –40°C to 125°C operating
junction temperature range are assured by design, characterization and
correlation with statistical process controls. The LTC3865I/LTC3865I-1
are guaranteed to meet performance speci?cations over the full –40°C
to 125°C operating junction temperature range. Note that the maximum
ambient temperature consistent with these speci?cations is determined by
speci?c operating conditions in conjunction with board layout, the rated
package thermal resistance and other environmental factors.
Note 3: T J is calculated from the ambient temperature T A and power
dissipation P D according to the following formulas:
LTC3865UH: T J = T A + (P D ? 34°C/W)
LTC3865FE: T J = T A + (P D ? 25°C/W)
Note 4: The LTC3865/LTC3865-1 are tested in a feedback loop that servos
V ITH1,2 to a speci?ed voltage and measures the resultant V OSENSE1,2 .
Note 5: Dynamic supply current is higher due to the gate charge being
delivered at the switching frequency. See Applications Information.
Note 6: Rise and fall times are measured using 10% and 90% levels. Delay
times are measured using 50% levels.
Note 7: The minimum on-time condition is speci?ed for an inductor peak-
to-peak ripple current 40% of I MAX (see Minimum On-Time Considerations
in the Applications Information section).
Note 8: V SENSE(MAX) defaults to 50mV for the LTC3865-1.
Note 9: Guaranteed by design.
3865fb
5
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