
LTC4096/LTC4096X
3
4096xf
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC4096 is guaranteed to meet the performance specications
from 0°C to 85°C. Specications over the – 40°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls.
Note 3: Failure to correctly solder the Exposed Pad of the package to the
PC board will result in a thermal resistance much higher than 40°C/W. See
Thermal Considerations.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
ITERMINATE
Charge Current Termination
Threshold
RITERM = 1k
RITERM = 2k
RITERM = 10k
88
42
6
100
50
9.5
112
58
13
mA
ITRIKL
Trickle Charge Current
(LTC4096 Only)
VBAT < VTRIKL; RIDC = 1k
VBAT < VTRIKL; RIUSB = 2k
85
42
100
50
115
58
mA
VTRIKL
Trickle Charge Threshold Voltage
(LTC4096 Only)
VBAT Rising
Hysteresis
●
2.8
2.9
135
3V
mV
VUVDC
DCIN Undervoltage Lockout
Voltage
From Low to High
Hysteresis
4
4.22
200
4.4
V
mV
VUVUSB
USBIN Undervoltage Lockout
Voltage
From Low to High
Hysteresis
3.8
4
200
4.2
V
mV
VASD-DC
VDCIN – VBAT Lockout Threshold
Voltage
VDCIN from High to Low, VBAT = 4.3V
VDCIN from Low to High, VBAT = 4.3V
530
100
55
mV
VASD-USB
VUSBIN – VBAT Lockout Threshold
Voltage
VUSBIN from High to Low, VBAT = 4.3V
VUSBIN from Low to High, VBAT = 4.3V
530
150
55
mV
VSUSP
VIL, Logic Low Voltage
0.5
V
VIH, Logic High Voltage
1.2
V
RSUSP
SUSP Pulldown Resistance
●
1.3
3.4
7
M
Ω
VCHRG
CHRG Output Low Voltage
ICHRG = 5mA
●
62
150
mV
ΔVRECHRG
Recharge Battery Threshold
Voltage
VFLOAT – VRECHRG
30
50
80
mV
tRECHRG
Recharge Comparator Filter Time VBAT from High to Low
1.6
ms
tTERMINATE
Termination Comparator Filter
Time
IBAT Drops Below Termination Threshold
3
ms
RON-DC
Power FET “ON” Resistance
(Between DCIN and BAT)
420
m
Ω
RON-USB
Power FET “ON” Resistance
(Between USBIN and BAT)
470
m
Ω
RDC-PWR
Power FET “ON” Resistance
(Between DCIN and PWR)
VDCIN = 5V, VUSBIN = 0V
15
Ω
RUSB-PWR
Power FET “ON” Resistance
(Between USBIN and PWR)
VDCIN = 0V, VUSBIN = 5V
6.6
Ω
TLIM
Junction Temperature in
Constant-Temperature Mode
115
°C
ELECTRICAL CHARACTERISTICS The ● denotes the specications which apply over the full operating
temperature range, otherwise specications are at TA = 25°C. VDCIN = 5V, VUSBIN = 5V, RIDC = 1kΩ, RIUSB = 2kΩ, RITERM = 2kΩ unless
otherwise noted.
Note 4: Supply current includes IDC and ITERM pin current (approximately
100A each) but does not include any current delivered to the battery
through the BAT pin.
Note 5: Supply current includes IUSB and ITERM pin current
(approximately 100A each) but does not include any current delivered to
the battery through the BAT pin.
Note 6: Guaranteed by long term current density limitations.
Note 7: VCC is greater of DCIN or USBIN