参数资料
型号: LTC4213IDDB#TRPBF
厂商: Linear Technology
文件页数: 4/20页
文件大小: 0K
描述: IC CIRC BREAK ELEC 8-DFN
标准包装: 2,500
系列: *
类型: *
应用: *
安装类型: 表面贴装
封装/外壳: 8-WFDFN 裸露焊盘
供应商设备封装: 8-DFN(3x2)
包装: 带卷 (TR)
LTC4213
12
4213f
APPLICATIO S I FOR ATIO
WU
U
Figure 2. Short Circuit Fault Timing Diagram
AB
CB TRIPS
VSENSE
VGATE
VCB
>VCB
VREADY
CIRCUIT BREAKER TRIPS
GATE AND READY PINS PULL LOW
SHORT CIRCUIT
tFAULT
4213 F02
The maximum load limit current is given by:
I
V
R
LIMIT MAX
CB MAX
DSON MIN
()
=
5
Most MOSFET data sheets have an RDSON specification
with typical and maximum values but no minimum value.
Assuming a normal distribution with typical as mean, the
minimum value can be estimated as
RR
R
DSON MIN
DSON NOM
DSON MAX
()
(
)
(
)
()
=
26
The LTC4213 gives higher gate drive than the manufac-
turer specified gate drive for RDSON. This gives a slightly
lower RDSON than specified. Operating temperature also
modulates the RDSON value.
Example Current Limit Calculation
An Si4410DY is used for current detection in a 5V supply
system with the LTC4213 VCB at 25mV (ISEL pin grounded).
The RDSON distribution for the Si4410DY is
Typical RDSON = 0.015 = 100%
Maximum RDSON = 0.02 = 133.3%
Estimated MIN RDSON = 2 15 – 20 = 0.010 = 66.7%
The RDSON variation due to gate drive is
RDSON @ 4.5VGS = 0.015 = 100% (spec. TYP)
RDSON @ 4.8VGS = 0.014 = 93% (MIN VGSMAX)
RDSON @ 7VGS = 0.0123 = 82% (NOM VGSMAX)
RDSON @ 8VGS = 0.012 = 80% (MAX VGSMAX)
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