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参数资料
| 型号： | LTC4225CGN-2#PBF |
| 厂商： | Linear Technology |
| 文件页数： | 11/24页 |
| 文件大小： | 346K |
| 描述： | IC CTLR HOT SWAP DUAL 24-SSOP |
| 标准包装： | 55 |
| 类型： | 热交换控制器 |
| 应用： | 通用 |
| 内部开关： | 无 |
| 电流限制： | 可调 |
| 电源电压： | 2.9 V ~ 18 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 24-SSOP（0.154"，3.90mm 宽） |
| 供应商设备封装： | 24-SSOP |
| 包装： | 管件 |
LTC4225-1/LTC4225-2
11
422512f
applicaTions inForMaTion
During a normal power-up, the ideal diode MOSFET turns
on first. As soon as the internally generated supply, INTV
CC
,
rises above its 2.2V undervoltage lockout threshold, the
internal charge pump is allowed to charge up the CPO
pins. Because the Hot Swap MOSFET is turned off at
power-up, OUT remains low. As a result, the ideal diode
gate drive amplifier senses a large forward drop between
the IN and OUT pins, causing it to pull up DGATE to the
CPO pin voltage.
Before the Hot Swap MOSFET can be turned on, EN must
remain low and ON must remain high for a 100ms debounce
cycle to ensure that any contact bounces during the inser-
tion have ceased. At the end of the debounce cycle, the
internal fault latches are cleared. The Hot Swap MOSFET
is then allowed to turn on by charging up HGATE with a
10礎 current source from the charge pump. The voltage
at the HGATE pin rises with a slope equal to 10礎/C
HG
and
the supply inrush current flowing into the load capacitor,
C
L
, is limited to:
I
INRUSH
=
C
L
C
HG
10礎
The OUT voltage follows the HGATE voltage when the
Hot Swap MOSFET turns on. If the voltage across the
current sense resistor, R
S
, becomes too high, the inrush
current will be limited by the internal current limiting
circuitry. Once the MOSFET gate overdrive exceeds 4.2V ,
the corresponding PWRGD pin pulls low to indicate that
the power is good. Once OUT reaches the input supply
voltage, HGATE continues to ramp up. An internal 12V
clamp limits the HGATE voltage above OUT .
When both of the MOSFETs are turned on, the gate drive
amplifier controls the gate of the ideal diode MOSFET , to
servo its forward voltage drop across R
S
, M
D
and M
H
to
25mV . If the load current causes more than 25mV of drop,
the MOSFET gate is driven fully on and the voltage drop
across the MOSFET is equal to I
LOAD
" R
DS(ON)
.
Turn-Off Sequence
The external MOSFETs can be turned off by a variety of
conditions. A normal turn-off for the Hot Swap MOSFET is
initiated by pulling the ON pin below its 1.155V threshold
(80mV ON pin hysteresis), or pulling the EN pin above
its 1.235V threshold. Additionally, an overcurrent fault
of sufficient duration to trip the circuit breaker also turns
off the Hot Swap MOSFET . Normally, the LTC4225 turns
off the MOSFET by pulling the HGATE pin to ground with
a 300礎 current sink.
All of the MOSFETs turn off when INTV
CC
falls below its
undervoltage lockout threshold (2.2V). The DGATE pin is
pulled down with a 100礎 current to one diode voltage
below the IN pin, while the HGATE pin is pulled down to
the OUT pin by a 200mA current.
The gate drive amplifier controls the ideal diode MOSFET
to prevent reverse current when the input supply falls
below OUT . If the input supply collapses quickly, the gate
drive amplifier turns off the ideal diode MOSFET with a
fast pull-down circuit as soon as it detects that IN is 20mV
below OUT . If the input supply falls at a more modest rate,
the gate drive amplifier controls the MOSFET to maintain
OUT at 25mV below IN.
Figure 2. Ideal Diode Controller Start-Up Waveforms
Figure 3. Hot Swap Controller Power-Up Sequence
IN
10V/DIV
CPO
10V/DIV
DGATE
10V/DIV
OUT
10V/DIV
20ms/DIV
422512 F02
ON
5V/DIV
HGATE
10V/DIV
OUT
10V/DIV
PWRGD
10V/DIV
50ms/DIV
422512 F03
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