参数资料
型号: LTC4227CGN-1#PBF
厂商: LINEAR TECHNOLOGY CORP
元件分类: 电源管理
英文描述: POWER SUPPLY MANAGEMENT CKT, PDSO16
封装: 0.150 INCH, LEAD FREE, PLASTIC, SSOP-16
文件页数: 20/20页
文件大小: 307K
代理商: LTC4227CGN-1#PBF
LTC4227-1/LTC4227-2
9
422712f
operaTion
The LTC4227 functions as an input supply diode-OR
with inrush current limiting and overcurrent protection
by controlling the external N-channel MOSFETs (MD1,
MD2 and MH) on a supply path. This allows boards to be
safely inserted and removed in systems with a backplane
powered by redundant supplies. The LTC4227 has a
single Hot Swap controller and two separate ideal diode
controllers, each providing independent control for the
two input supplies.
When the LTC4227 is first powered up, the gates of the
MOSFETsareallheldlow,keepingthemoff.AstheDGATE2
pull-up can be disabled by the D2ON pin, DGATE2 will pull
high only when the D2ON pin is pulled low. The gate drive
amplifier (GA1, GA2) monitors the voltage between the
IN and SENSE+ pins and drives the respective DGATE pin.
The amplifier quickly pulls up the DGATE pin, turning on
the MOSFET for ideal diode control, when it senses a large
forwardvoltagedrop.WiththeidealdiodeMOSFETsacting
as an input supply diode-OR, the SENSE+ pin voltage rises
to the highest of the supplies at the IN1 and IN2 pins. The
stored charge in an external capacitor connected between
the CPO and IN pins provides the charge needed to quickly
turn on the ideal diode MOSFET. An internal charge pump
charges up this capacitor at device power-up. The DGATE
pin sources current from the CPO pin and sinks current
into the IN and GND pins.
Pulling the ON pin high and EN pin low initiates a 100ms
debounce timing cycle. After this timing cycle, a 10A cur-
rent source from the charge pump ramps up the HGATE
pin. When the Hot Swap MOSFET turns on, the inrush
current is limited at a level set by an external sense resistor
(RS) connected between the SENSE+ and SENSEpins.
An active current limit amplifier (A1) servos the gate of
the MOSFET to 65mV across the current sense resistor.
Inrush current can be further reduced, if desired, by add-
ing a capacitor from HGATE to GND. When the MOSFET’s
gate overdrive (HGATE to OUT voltage) exceeds 4.2V, the
PWRGD pin pulls low.
When the ideal diode MOSFET is turned on, the gate drive
amplifiercontrolsDGATEtoservotheforwardvoltagedrop
(VIN – VSENSE+) across the MOSFET to 25mV. If the load
current causes more than 25mV of voltage drop, the gate
voltage rises to enhance the MOSFET. For large output cur-
rents, the MOSFET’s gate is driven fully on and the voltage
drop is equal to ILOAD RDS(ON) of the MOSFET.
In the case of an input supply short-circuit when the
MOSFETs are conducting, a large reverse current starts
flowing from the load towards the input. The gate drive
amplifier detects this failure condition as soon as it ap-
pears and turns off the ideal diode MOSFET by pulling
down the DGATE pin.
Inthecasewhereanovercurrentfaultoccursonthesupply
output, the current is limited to 65mV/RS.Afterafaultfilter
delay set by 100A charging the TMR pin capacitor, the
circuit breaker trips and pulls the HGATE pin low, turning
off the Hot Swap MOSFET. The FAULT pin is latched low.
At this point, the DGATE pin continues to pull high and
keeps the ideal diode MOSFET on.
Internal clamps limit both the DGATE to IN and CPO to IN
voltages to 12V. The same clamp also limits the CPO and
DGATE pins to a diode voltage below the IN pin. Another
internal clamp limits the HGATE to OUT voltage to 12V
and also clamps the HGATE pin to a diode voltage below
the OUT pin.
Power to the LTC4227 is supplied from either the IN or
OUT pins, through an internal diode-OR circuit to a low
dropout regulator (LDO). That LDO generates a 5V supply
at the INTVCC pin and powers the LTC4227’s internal low
voltage circuitry.
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