参数资料
型号: LTC4360ISC8-2#TRMPBF
厂商: LINEAR TECHNOLOGY CORP
元件分类: 电源管理
英文描述: 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8
封装: LEAD FREE, PLASTIC, MO-203BA, SC-70, 8 PIN
文件页数: 11/14页
文件大小: 1370K
代理商: LTC4360ISC8-2#TRMPBF
LTC4360-1/LTC4360-2
6
436012fa
OPERATION
Mobile devices like cell phones and MP3/MP4 players have
highly integrated subsystems fabricated from deep submi-
cronCMOSprocesses.Thesmallformfactorisaccompanied
by low absolute maximum voltage ratings. The sensitive
electronics are susceptible to damage from transient or DC
overvoltage conditions from the power supply.
Failures or faults in the power adaptor can cause an over-
voltage event. So can hot-plugging an AC adaptor into the
power input of the mobile device (see LTC Application Note
88). Today’s mobile devices derive their power supply or
recharge their internal batteries from multiple alternative
inputs like AC wall adaptors, car battery adaptors and USB
ports. A user may unknowingly plug in the wrong adaptor,
damaging the device with a high or even a negative power
supply voltage.
The LTC4360 protects low voltage electronics from these
overvoltage conditions by controlling a low cost external
N-channel MOSFET configured as a pass transistor. At
power-up (VIN > 2.1V), a start-up delay cycle begins. Any
overvoltage condition causes the delay cycle to continue
until a safe voltage is present. When the delay cycle com-
pletes, an internal high side switch driver slowly ramps up
the MOSFET gate, powering up the output at a controlled
rate and limiting the inrush current to the output capacitor.
If the voltage at the IN pin exceeds 5.8V (VIN(OV)),
GATE is pulled low quickly to protect the load. The
incoming power supply must remain below 5.7V
(VIN(OV) – VOV) for the duration of the start-up delay to
restart the GATE ramp-up.
The LTC4360-1 has a CMOS compatible ON input. When
driven low, the part is enabled. When driven high, the
external N-channel MOSFET is turned off and the supply
current of the LTC4360-1 drops to 1.5A. The PWRGD
pull-down releases during this low current sleep mode,
UVLO or overvoltage and the subsequent 130ms start-up
delay. After the start-up delay, GATE starts its slow ramp-
up and ramps higher than VGATE(TH) to trigger a 65ms
delay cycle. When that completes, PWRGD pulls low.
The LTC4360-2 has a GATEP pin that drives an optional
external P-channel MOSFET to provide protection against
negative voltages at IN.
The typical LTC4360 application protects 2.5V to 5.5V sys-
tems in portable devices from power supply overvoltage.
The basic application circuit is shown in Figure 1. Device
operation and external component selection is discussed
in detail in the following sections.
APPLICATIONS INFORMATION
GATE
COUT
10F
M1
Si1470DH
IN
436012 F01
VOUT
5V
1.5A
VIN
5V
LTC4360-1
ON
OUT
PWRGD
GND
Figure 1. Protection from Input Overvoltage
Start-Up
When VIN is less than the undervoltage lockout level of
2.1V, the GATE driver is held low and the PWRGD pull-
down is high impedance. When VIN rises above 2.1V and
ON (LTC4360-1) is held low, a 130ms delay cycle starts.
Any undervoltage or overvoltage event at IN (VIN < 2.1V or
VIN > 5.7V) restarts the delay cycle. This delay allows the
N-channel MOSFET to isolate the output from any input
transients that occur at start-up. When the delay cycle
completes, GATE starts its slow ramp-up.
GATE Control
An internal charge pump provides a gate overdrive greater
than 3.5V when 2.5V ≤ VIN < 3V. If VIN ≥ 3V, the gate drive
is guaranteed to be greater than 4.5V. This allows the use
of logic-level N-channel MOSFETs. An internal 6V clamp
between GATE and OUT protects the MOSFET gate.
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