参数资料
型号: LTC4360ISC8-2#TRMPBF
厂商: LINEAR TECHNOLOGY CORP
元件分类: 电源管理
英文描述: 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8
封装: LEAD FREE, PLASTIC, MO-203BA, SC-70, 8 PIN
文件页数: 3/14页
文件大小: 1370K
代理商: LTC4360ISC8-2#TRMPBF
LTC4360-1/LTC4360-2
11
436012fa
APPLICATIONS INFORMATION
Figure 10. Recommended Layout for N-Channel MOSFET and P-/N-Channel MOSFET Configurations
LTC4360 to shut off the MOSFET before VOUT overshoots
to a dangerous voltage. A larger COUT also helps to lower
the VOUT due to the discharge of the energy in LIN if the
MOSFET BVDSS is used as an input clamp.
Layout Considerations
Figure 10 shows example PCB layouts for the single
N-channel MOSFET (SC70 package) configuration and the
P-channel MOSFET/N-channel MOSFET (Complementary
P, N MOSFET in TSOP-6 package) configuration. Keep the
traces to the MOSFETs wide and short. The PCB traces
associated with the power path through the MOSFETs
should have low resistance.
Si3590DV
436012 F09
Si1470DH
SUPPLY/IN
SUPPLY
IN
OUT
GND
6
5
4
1
2
3
1
2
3
4
8
7
6
5
LTC4360-2
1
2
3
4
8
7
6
5
1
2
3
6
5
4
LTC4360-1
Figure 9. Overvoltage Protection Waveforms When 20V Plugged into 5V System
VIN
20V/DIV
VGATE
10V/DIV
VOUT
5V/DIV
ICABLE
10A/DIV
1s/DIV
436012 F08
FIGURE 8 CIRCUIT
RIN = 150m, LIN = 2H
LOAD = 10, COUT = 10F (16V, SIZE 1210)
with the USB input already live. As shown in Figure 9, a
large current can build up in LIN to charge up COUT. When
the N-channel MOSFET shuts off, the energy stored in LIN
is dumped into COUT, causing a large 40V input transient.
The LTC4360 limits this to a 1V rise in the output voltage.
If the voltage rise at VOUT due to the discharge of the
energy in LIN into COUT is not acceptable or the avalanche
capability of the MOSFET is exceeded, an additional exter-
nal clamp such as the SMAJ24A can be placed between
IN and GND. COUT is the decoupling capacitor of the
protected circuits and its value will largely be determined
by their requirements. Using a larger COUT will work with
LIN to slow down the dV/dt at OUT, allowing time for the
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