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参数资料
| 型号： | LTC4413EDD2#PBF |
| 厂商： | LINEAR TECHNOLOGY CORP |
| 元件分类： | 模拟信号调理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, PDSO10 |
| 封装： | 3 X 3 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, MO-229WEED-2, DFN-10 |
| 文件页数： | 16/16页 |
| 文件大小： | 190K |
| 代理商： | LTC4413EDD2#PBF |
LTC4413-1/LTC4413-2
9
441312fb
OPERATION
The LTC4413-1/LTC4413-2 are described with the aid of the
Block Diagram. Operation begins when the power source at
VINA or VINB rises above the undervoltage lockout (UVLO)
voltage of 2.4V and the corresponding control pin ENBA or
ENBB is low. If only the voltage at the VINA pin is present,
the internal power source (VDD) is supplied from the VINA
pin. The amplier (A) pulls a current proportional to the
difference between VINA and VOUTA from the gate (VGATEA)
of the internal PFET (PA), driving this gate voltage below
VINA. This turns on PA. As VOUTA pulls up to a forward
voltage drop (VFWD) of 15mV below VINA, the LTC4413
regulates VGATEA to maintain the small forward voltage
drop. The system is now in forward regulation and the
load at VOUTA is powered from the supply at VINA. As the
load current varies, VGATEA is controlled to maintain VFWD
until the load current exceeds the transistor’s (PA) ability
to deliver the current as VGATEA approaches GND. At this
point, the PFET behaves as a xed resistor, RON, whereby
the forward voltage increases slightly with increased load
current. As the magnitude of IOUT increases further, (such
that ILOAD > IOC) the LTC4413-1/LTC4413-2 xes the load
current to the constant value IOC to protect the device.
The characteristics for parameters RFWD, RON, VFWD and
IOC are specied with the aid of Figure 1, illustrating the
LTC4413-1/LTC4413-2 forward voltage drop versus that
of a Schottky.
If another supply is provided at VINB, the LTC4413-1/
LTC4413-2 likewise regulate the gate voltage on PB to
maintain the output voltage, VOUTB, just below the input
voltage VINB. If this alternate supply, VINB, exceeds the
voltage at VINA, the LTC4413-1/LTC4413-2 selects this
input voltage as the internal supply (VDD). This second
ideal diode operates independently of the rst ideal diode
function.
When an alternate power source is connected to the load
at VOUTA (or VOUTB), the LTC4413-1/LTC4413-2 sense the
increased voltage at VOUTA, and amplier A increases the
voltage VGATEA, reducing the current through PA. When
VOUTA is higher than VINA + VRTO, VGATEA will be pulled up
to VDD, turning off PA. The internal power source for the
LTC4413-1/LTC4413-2 (VDD) then diverts to draw current
from the VOUTA pin, only if VOUTA is larger than VINB (or
VOUTB). The system is now in the reverse turn-off mode.
Power to the load is being delivered from an alternate
supply, and only a small current (ILEAK) is drawn from or
sourced to VINA to sense the potential at VINA.
When the selected channel of the LTC4413-1/LTC4413-2
is in reverse turn-off mode or both channels are disabled,
the STAT pin sinks 11μA of current (ISON) if connected.
Channel selection is accomplished using the two ENB
pins, ENBA and ENBB. When the ENBA input is asserted
(high), PA has its gate voltage pulled to VDD, turning off
PA. A 3.5μA pull-down current on the ENB pins ensures
a low level at these inputs if left oating.
FORWARD VOLTAGE (V)
0
CURRENT
(A)
IOC
IFWD
LTC4413-1
LTC4413-2
SLOPE: 1/RON
VFWD
441312 TA01b
SLOPE: 1/RFWD
1N5817
Figure 1. The LTC4413 vs the 1N5817
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