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| 型号： | LTC693CSW#PBF |
| 厂商： | Linear Technology |
| 文件页数： | 10/20页 |
| 文件大小： | 0K |
| 描述： | IC MPU SUPERVISRY CIRCUIT 16SOIC |
| 标准包装： | 47 |
| 类型： | 简单复位/加电复位 |
| 监视电压数目： | 1 |
| 输出： | 开路漏极或开路集电极 |
| 复位： | 高有效/低有效 |
| 复位超时： | 最小为 140 ms |
| 电压 - 阀值： | 4.4V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SOIC |
| 包装： | 管件 |
LTC692/LTC693
APPLICATIONS INFORMATION
ANY PNP POWER TRANSISTOR
I=
V OUT – V BATT
R
5V
3
5
BATT ON
V CC V OUT
2
5V
V CC
R
V OUT
0.1μF
3V
1
LTC693
V BATT
GND
4
0.1μF
0.1μF
3V
LTC692
LTC693
V BATT
GND
0.1μF
692_3 ? F02
692_3 ? F03
Figure 2. Using BATT ON to Drive External PNP Transistor
The LTC692/LTC693 are protected for safe area operation
with a short-circuit limit. Output current is limited to ap-
proximately 200mA. If the device is overloaded for long
periods of time, thermal shutdown turns the power switch
off until the device cools down. The threshold temperature
for thermal shutdown is approximately 155°C with about
10°C of hysteresis which prevents the device from oscil-
lating in and out of shutdown.
The PNP switch used in competitive devices was not chosen
for the internal power switch because it injects unwanted
current into the substrate. This current is collected by the
V BATT pin in competitive devices and adds to the charging
current of the battery which can damage lithium batteries.
The LTC692/LTC693 use a charge-pumped NMOS power
switch to eliminate unwanted charging current while
achieving low dropout and low supply current. Since no
current goes to the substrate, the current collected by the
V BATT pin is strictly junction leakage.
A 125Ω PMOS switch connects the V BATT input to V OUT in
battery backup mode. The switch is designed for very low
dropout voltage (input-to-output differential). This feature
is advantageous for low current applications such as bat-
Figure 3. Charging External Battery Through V OUT
memory backup instead of a battery. The charging resistor
for the rechargeable batteries should be connected to V OUT
since this eliminates the discharge path that exists when
the resistor is connected to V CC (Figure 3).
Replacing the Backup Battery
When changing the backup battery with system power on,
spurious resets can occur while the battery is removed
due to battery standby current. Although battery standby
current is only a tiny leakage current, it can still charge up
the stray capacitance on the V BATT pin. The oscillation cycle
is as follows: When V BATT reaches within 50mV of V CC ,
the LTC692/LTC693 switch to battery backup. V OUT pulls
V BATT low and the devices go back to normal operation.
The leakage current then charges up the V BATT pin again
and the cycle repeats.
If spurious resets during battery replacement pose no
problems, then no action is required. Otherwise, a resistor
from V BATT to GND will hold the pin low while changing
the battery. For example, the battery standby current is
1μA maximum over temperature and the external resistor
required to hold V BATT below V CC is:
tery backup in CMOS RAM and other low power CMOS
circuitry. The supply current in battery backup mode is
1μA maximum.
R ≤
V CC – 50mV
1 μ A
The operating voltage at the V BATT pin ranges from 2.0V to
4.0V. High value capacitors, such as electrolytic or farad-
size double layer capacitors, can be used for short-term
With V CC = 4.25V, a 3.9M resistor will work. With a 3V
battery, this resistor will draw only 0.77μA from the bat-
tery, which is negligible in most cases.
0692fb
10
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