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参数资料
| 型号： | LV5105FN |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 电源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, QCC48 |
| 封装： | 7 X 7 MM, VQFN-48 |
| 文件页数： | 3/9页 |
| 文件大小： | 155K |
| 代理商： | LV5105FN |
LV5105FN
No.7600-3/9
Continued from preceding page.
[REG3]
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Output voltage 1
VO3
IO = 30mA, ECO = H
2.79
2.85
2.91
V
Output voltage 2
VO3E
IO = 30mA, ECO = L
2.76
2.85
2.94
V
Drop out voltage
VDR3
VBAT = 2.7V, IO = 30mA
0.06
0.12
V
Load regulation
ΔVOLO3
IO = 1 to 50mA
10
50
mV
Line regulation
ΔVOLN3
VBAT = 3.3 to 4.5V, IO = 1mA
10
60
mV
Output voltage temperature
coefficient
ΔVO3/ΔTj
Ta = -25 to 75
°C, IO = 30mA
±100
ppm/
°C
Ripple rejection
VR3
VBAT = 3.6V, IO = 30mA, VRR = -20dBV,
fRR = 1kHz
65
dB
Output noise voltage
VON3
IO = 30mA, 20Hz < f < 20kHz
75
μVrms
[REG4]
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Output voltage
VO4
IO = 30mA
2.91
3
3.09
V
Drop out voltage
VDR3
VBAT = 2.9V, IO = 30mA
0.06
0.12
V
Load regulation
ΔVOLO4
IO = 1 to 50mA
10
50
mV
Line regulation
ΔVOLN4
VBAT = 3.3 to 4.5V, IO = 1mA
10
60
mV
Output voltage temperature
coefficient
ΔVO4/ΔTj
Ta = -25 to 75
°C, IO = 30mA
±100
ppm/
°C
Ripple rejection
VR4
VBAT = 3.6V, IO = 30mA, VRR = -20dBV,
fRR = 1kHz
55
dB
Output noise voltage
VON4
IO = 30mA, 20Hz < f < 20kHz
75
μVrms
[DET1]
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Detection voltage
VD1
H
→L
2.45
2.5
2.55
V
Hysteresis width
ΔVH1
75
125
175
mV
Detection voltage temperature
coefficient
ΔVD1/ΔTj
Ta = -25 to 75
°C
±100
ppm/
°C
[VBATDET]
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Detection voltage
VDB
H
→L
3.04
3.1
3.16
V
Hysteresis width
ΔVHB
93
155
217
mV
Output pull-up resistance
RPDETB
1.4
1.8
2.2
M
Ω
Detection voltage temperature
coefficient
ΔVDB/ΔTj
Ta = -25 to 75
°C
±100
ppm/
°C
[Charge pump]
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Output voltage 1
VCPO1
VBAT = 3.2 to 5.9V, Load current 80mA
4.8
5
5.2
V
Oscillation frequency
CPOSC
0.7
1
1.3
MHz
Output ripple
VRCP
VBAT = 3.6, Load current 80mA
±200
mVp-p
Efficiency
η
VBAT = 3.2, Load current 80mA
72
%
Continued on next page.
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