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参数资料
| 型号： | LV51141T |
| 元件分类： | 电源管理 |
| 英文描述： | 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO6 |
| 封装： | SOT-23, 6 PIN |
| 文件页数： | 6/13页 |
| 文件大小： | 155K |
| 代理商： | LV51141T |
LV51141T
No.A1025-2/13
Electrical Characteristics at Topr = 25°C, unless otherwise specified
Ratings
Parameter
Symbol
Conditions
Test
circuit
min
typ
max
Unit
Detection voltage
Over-charge detection voltage
VC
1
4.225
4.250
4.275
V
Over-charge hysteresis voltage
VHc
1
0.175
0.2
0.225
V
Over-discharge detection voltage
Vdc
1
2.925
3.000
3.075
V
Over-discharge reset voltage(*2)
VRdc
1
3.120
3.200
3.280
V
Charge over-current detection voltage
VIc
2
-1.000
-0.700
-0.400
V
Discharge over-current detection voltage
VIdc
2
0.100
0.120
0.140
V
Load short-circuiting detection voltage
Vshort
Based on VDD, VDD = 3.5V
2
-1.7
-1.3
-1.0
V
Input voltage
Input voltage between VDD and VSS
VDD
Internal circuit operating voltage
-
1.8
7.0
V
0V battery charge starting charger voltage
Vcha
Acceptable
3
0.9
1.4
V
Current consumption
Current consumption on operation
Iopr
VDD = 3.5V, VM = 0V
4
3.0
6.0
μA
Current consumption on shutdown
Isdn
VDD = VM = 1.8V
4
0.1
μA
Output resistance
CO : Pch ON resistance
Rcop
CO = 3.0V, VDD = 3.5V,
VM = 0V
5
1.5
3.0
4.5
k
Ω
CO : Nch ON resistance
Rcon
CO = 0.5V, VDD = 4.6V,
VM = 0V
5
0.5
1.0
1.5
k
Ω
DO : Pch ON resistance
Rdop
DO = 3.0V, VDD = 3.5V,
VM = 0V
5
1.7
3.5
5.0
k
Ω
DO : Nch ON resistance
Rdon
DO = 0.5V, VDD = VM = 1.8V
5
1.7
3.5
5.0
k
Ω
Discharge over-current release resistance
Rdwn
VDD = 3.5V, VM = 1.0V
5
15.0
30.0
60.0
k
Ω
Detection delay time
Over-charge detection delay time
tc
VDD = VC-0.2V→VC+0.2V,
VM = 0V
6
0.70
1.0
1.30
s
Over-discharge detection delay time
tdc
VDD = Vdc+0.2V→Vdc-0.2V,
VM = 0V
6
21.7
31.0
40.3
ms
Charge over-current detection delay time
tic
VDD = 3.5V, VM = 0V→-1.0V
6
5.6
8.0
10.4
ms
Discharge over-current detection delay time
tidc
VDD = 3.5V, VM = 0V→1.0V
6
5.6
8.0
10.4
ms
Load short-circuiting detection delay time
tshort
VDD = 3.5V, VM = 0V→3.5V
6
190
370
550
μs
Release delay time
Release delay time 1
Over-discharge release
Charge over-current release (*1)
Discharge over-current release
Load short-circuiting release
trel1
6
1.0
2.0
3.0
ms
Release delay time 2
Over-charge release
trel2
VDD = VC+0.2V→VC-0.2V,
VM = 1.0V
6
8.0
16.0
24.0
ms
Note : *1 When the charger is connected under over-discharge , this means the time after the over-discharge detection is released.
*2 The over-discharge detection is released at this voltage only when the charger is connected.
The over-discharge detection isn't released if the charger isn't connected.
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相关代理商/技术参数 |
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|---|---|
| LV51141T-TE-F-E | 功能描述:电池管理 RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
| LV51142T | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:CMOS IC 1-Cell Lithium-Ion Battery Protection IC |
| LV51142T-TE-F-E | 功能描述:电池管理 RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
| LV51143T-TE-F-E | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:Battery Management 制造商:ON Semiconductor 功能描述:REEL / 1-CELL LIB PROTECTION 制造商:Sony Semiconductor Solutions Division 功能描述: |
| LV51144T | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:CMOS IC 1-Cell Lithium-Ion Battery Protection IC |
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