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参数资料
| 型号： | LV5124T |
| 元件分类： | 电源管理 |
| 英文描述： | 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8 |
| 封装： | 0.150 INCH, MSOP-8 |
| 文件页数： | 6/8页 |
| 文件大小： | 171K |
| 代理商： | LV5124T |
LV5124T
No.A1153-6/8
0V cell charging operation
If voltage between VDD and V becomes equal to or more than the 0V cell charging lowest operation voltage when
the cell voltage is 0V, the Cout pin turns to “H” and charging is enabled.
Shorten the test time
By turning T pin to the VDD , the delay times set by the internal counter can be cut. If T pin is open, the delay times
are normal. Delay time not set by the counter just like as short circuit detection delay cannot be controlled by this pin
And we recommend that T pin is connected to Vss to prevent malfunction when excessive current flows in short
circuit operation.
Operation in case of detection overlap
Overlap state
Operation in case of
detection overlap
State after detection
During over-charge
detection,
Over-discharge
detection is made,
Over-charge detection is prioritized. If over-
discharge state continues even after over-
charge detection, over-discharge detection is
resumed.
When over-charge state is made first, V- is
released. When over-discharge is detected
after over-charge state is made, the IC does not
go into the stand-by mode. Note that V- is
connected to VDD via 200k.
Over-current
detection is made,
(*1) Both detections can be made in parallel.
Over-charge detection continues even when the
over-current state is made first. If the over-
charge state is made first, over-current detection
is interrupted.
(*2) When over-current state is made first, V- is
connected to VSS via 1M. When over-charge
state is made first, V- is released.
During over-discharge
detection,
Over-charge detection
is made,
Over-discharge detection is interrupted and
over-charge detection is prioritized. When over-
discharge state continues even after over-
charge state is made, over-discharge detection
is resumed.
The IC does not go into the stand-by mode
when over-discharge state is made after over-
charge detection. Note that V- is connected to
VDD via 200k.
Over-current
detection is made,
(*3) Both detections can be made in parallel.
Over-discharge detection continues even when
the over-current state is made first. But over-
current detection is interrupted when the over-
discharge state is made first,
(*4) If over-current state is made first, V- will be
connected to VSS via 1M. If over-discharge
detection is made next, V- also will be
connected to VDD via 200k to get into stand-
by mode. If over-discharge state is made first, V-
will be connected to VDD via 200k to get into
stand-by mode.
Over-charge detection
is made,
(*1)
(*2)
During over-current
detection,
Over-discharge
detection is made,
(*3)
(*4)
(Note) Short-circuit detection can be made independently.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| LV5124T-TLM-E | 制造商:ON Semiconductor 功能描述:2-CELL LIB PROTECTION - Tape and Reel |
| LV5125T-TLM-E | 制造商:ON Semiconductor 功能描述:2-CELL LIB PROTECTION - Tape and Reel |
| LV5207LP | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:For Cellular Phone LED Driver |
| LV5207LP-E | 功能描述:LED照明驱动器 RoHS:否 制造商:STMicroelectronics 输入电压:11.5 V to 23 V 工作频率: 最大电源电流:1.7 mA 输出电流: 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:SO-16N |
| LV5207LP-TE-L-E | 功能描述:LED照明驱动器 RoHS:否 制造商:STMicroelectronics 输入电压:11.5 V to 23 V 工作频率: 最大电源电流:1.7 mA 输出电流: 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:SO-16N |
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