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参数资料
| 型号： | LV8806GQ |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 运动控制电子 |
| 英文描述： | AC MOTOR CONTROLLER, QCC16 |
| 封装： | 2.60 X 2.60 MM, UTC-16 |
| 文件页数： | 3/6页 |
| 文件大小： | 237K |
| 代理商： | LV8806GQ |
1998, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3111
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No.
D13334EJ2V0DS00 (2nd edition)
Date Published
May 2001 NS CP(K)
Printed in Japan
DATA SHEET
The mark 5 shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3111 is N channel MOS FET device that
features a low on-state resistance and excellent
switching characteristics, and designed for high voltage
applications such as DC/DC converter, actuator driver.
FEATURES
Gate voltage rating ±30 V
Low on-state resistance
RDS(on) = 180 m
MAX. (VGS = 10 V, ID = 10 A)
Low input capacitance
Ciss = 1000 pF TYP. (VDS = 10 V, VGS = 0 V)
Avalanche capability rated
Built-in gate protection diode
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to source voltage (VGS = 0 V)
VDSS
200
V
Gate to source voltage (VDS = 0 V)
VGSS
±30
V
Drain current (DC) (TC = 25 °C)
ID(DC)
±20
A
Drain current (pulse)
Note1
ID(pulse)
±60
A
Total power dissipation (TA = 25 °C)
PT1
1.5
W
Total power dissipation (TC = 25 °C)
PT2
65
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55 to +150
°C
Single avalanche current
Note2
IAS
20
A
Single avalanche energy
Note2
EAS
100
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 100 V, RG = 25
, VGS = 20 V→0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3111
TO-220AB
2SK3111-S
TO-262
2SK3111-ZJ
TO-263
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