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参数资料
| 型号： | LV8806GQ |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 运动控制电子 |
| 英文描述： | AC MOTOR CONTROLLER, QCC16 |
| 封装： | 2.60 X 2.60 MM, UTC-16 |
| 文件页数： | 6/6页 |
| 文件大小： | 237K |
| 代理商： | LV8806GQ |
Data Sheet D13334EJ2V0DS
4
2SK3111
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
150
R
DS
(on)
-Drain
to
Source
On-State
Resistance
-
m
200
0
100
50
Tch - Channel Temperature - C
300
100
VGS = 10 V
Pulsed
350
250
150
50
ID = 10 A
ID = 20 A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
0.1
100
1000
1
10
100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
10
10000
1000
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
1
0.1
10
100
1000
1
10
100
VDD = 100 V
VGS = 10 V
RG = 10
td(off)
td(on)
tr
tf
REVERSE RECOVERY TIME vs.
DIODE CURRENT
IF - Diode Current - A
trr
-
Reverse
Recovery
Time
-
ns
0.1
10
1
10
100
di/dt = 50 A/
s
VGS = 0 V
1
1000
V
GS
-
Gate
to
Source
Voltage
-
V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
0
10
20
3040
5060
50
100
150
200
2
4
6
8
0
10
12
14
16
0
VDD = 160 V
100 V
40 V
VGS
VDS
ID = 20 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VSD - Source to Drain Voltage - V
ISD
-
Diode
Forward
Current
-
A
0.0
0.1
1
10
0.5
1.0
1.5
100
VGS = 10 V
0 V
Pulsed
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相关代理商/技术参数 |
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