LX3055
PRODUCTION DATA SHEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
Copyright
2004
Rev. 1.0, 2004-07-26
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Coplanar InGaAs/InP PIN Photo Diode
TM
DESCRIPTION
Microsemi’s
InGaAs/InP
PIN
Photo Diode chips are ideal for high
bandwidth
1310nm
and
1550nm
optical networking applications.
The device series offers high
responsivity, low dark current, and
high bandwidth for high performance
and low sensitivity receiver design.
The LX3055
4 Gbps coplanar
waveguide photodiode
is currently
offered
in
die
form
allowing
manufacturers
the
versatility
of
custom
assembly
configurations
including traditional wirebond or flip
chip assembly
This
device
is
ideal
for
manufacturers of optical receivers,
transponders,
optical
transmission
modules and combination PIN photo
diode – transimpedance amplifier.
IMPORTANT:
For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
PRODUCT H I GHLIGHT
Coplanar Design (gnd-signal-
gnd) 50 characteristic
impedance
125m standard pad pitch for
ease of test
Large 75m x 75m pad size for
ease of packaging
Wire bond or Flip Chip capability
KEY FEATUR ES
LX3055 single die
Coplanar Waveguide , 50
High Responsivity
Low Dark Current
High Bandwidth
Anode/Cathode on
Illuminated Side
125m Pad pitch
Die good for bond wire or
flip chip applications
APPLI C ATION S
4 Gigabit Fiber Channel
1310nm CATV Optical
Applications
SONET/SDH OC-48, ATM
2.5Gb/s or 3.125Gb/s
Ethernet
1310nm VCSEL receivers
Optical Backplane
BEN E FITS
Large wire bond contact
pads
Low contact resistance
Wire bond or flip chip
applications
Ground- Signal-Ground pad
configuration for standard
RF test probes
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