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参数资料
| 型号： | LX3055 |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 光检测 |
| 英文描述： | FIBER OPTIC PHOTODIODE DETECTOR |
| 封装： | DIE |
| 文件页数： | 2/4页 |
| 文件大小： | 255K |
| 代理商： | LX3055 |
LX3055
PRODUCTION DATA SHEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
Copyright
2004
Rev. 1.0, 2004-07-26
WWW
.Microse
m
i
.CO
M
Coplanar InGaAs/InP PIN Photo Diode
TM
ABSOLUTE MAXIMUM RATINGS
Operating Junction Temperature.....................................................................-20 to +85 °C
Storage Temperature Range..........................................................................-55 to +125 °C
Maximum Soldering Temperature (10 seconds maximum) ...................................... 260 °C
Note: Exceeding these ratings could cause damage to the device.
PACKAGE PIN OUT
p
Conta
c
t
n
Conta
c
t
(C
a
th
o
de
)
n
Conta
c
t
LX3055
ELECTRICAL CHA RACTERISTICS
Test conditions: TA = 25°C, VR = 2V
LX3055
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
ELECTRICAL CHARACTERISTICS
Active Area Diameter
60
m
VR = 2V, λ =1550nm
0.85
1.0
Responsivity
1
R
VR = 2V, λ =1310nm
0.80
0.90
A/W
Dark Current
ID
VR = 5V
0.6
6
nA
Breakdown Voltage
BVR
IR = 10A
30
44
V
Capacitance
C
VR = 2V
0.35
0.40
pF
Bandwidth
2
BW
VR = 2V, λ =1550nm @ - 3dB
6.5
8
GHz
Note: 1. Antireflective coating is wavelength @ 1430nm covering 1310 and 1550nm applications
2. Bandwidth is measured @ -3dB electrical power (photocurrent drops to 71% of DC value)
APPLICATION CIRCUITS
R
DIODE
C
SHUNT
L
SER1
R
SER
C
DIODE
L
SER2
CPW
Pads
Figure x –
Typical VRM Application
Results
RSET (Ohm)
LSER1 (pH)
LSER2 (pH)
CSHUNT (fF)
CDIODE (fF)
RDIODE (M Ohm)
LX3055
20.1
1.6
1.5
7.1
311
730
PP
AA
CC
KK
AA
GG
EE
DD
AA
TT
AA
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