参数资料
型号: M1A3PE3000-PQG208
厂商: Microsemi SoC
文件页数: 91/162页
文件大小: 0K
描述: IC FPGA 1KB FLASH 3M 208-PQFP
标准包装: 24
系列: ProASIC3E
RAM 位总计: 516096
输入/输出数: 147
门数: 3000000
电源电压: 1.425 V ~ 1.575 V
安装类型: 表面贴装
工作温度: 0°C ~ 70°C
封装/外壳: 208-BFQFP
供应商设备封装: 208-PQFP(28x28)
ProASIC3E DC and Switching Characteristics
2-20
Revision 13
Detailed I/O DC Characteristics
Table 2-18 Input Capacitance
Symbol
Definition
Conditions
Min.
Max.
Units
CIN
Input capacitance
VIN = 0, f = 1.0 MHz
8
pF
CINCLK
Input capacitance on the clock pin
VIN = 0, f = 1.0 MHz
8
pF
Table 2-19 I/O Output Buffer Maximum Resistances1
Standard
Drive Strength
RPULL-DOWN ()2
RPULL-UP ()3
3.3 V LVTTL / 3.3 V LVCMOS
4 mA
100
300
8 mA
50
150
12 mA
25
75
16 mA
17
50
24 mA
11
33
3.3 V LVCMOS Wide Range
100 A
Same as regular
3.3 V LVCMOS
Same as regular
3.3 V LVCMOS
2.5 V LVCMOS
4 mA
100
200
8 mA
50
100
12 mA
25
50
16 mA
20
40
24 mA
11
22
1.8 V LVCMOS
2 mA
200
225
4 mA
100
112
6 mA
50
56
8 mA
50
56
12 mA
20
22
16 mA
20
22
1.5 V LVCMOS
2 mA
200
224
4 mA
100
112
6 mA
67
75
8 mA
33
37
12 mA
33
37
3.3 V PCI/PCI-X
Per PCI/PCI-X
specification
25
75
3.3 V GTL
20 mA 4
11
2.5 V GTL
20 mA 4
14
Notes:
1. These maximum values are provided for informational reasons only. Minimum output buffer resistance
values depend on VCCI, drive strength selection, temperature, and process. For board design
considerations and detailed output buffer resistances, use the corresponding IBIS models located on the
Microsemi SoC Products Group website at www.microsemi.com/soc/techdocs/models/ibis.html.
2. R(PULL-DOWN-MAX) = (VOLspec) / IOLspec
3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspec
4. Output drive strength is below JEDEC specification.
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