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参数资料
| 型号： | M2035S-E3/4W |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 20 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 121K |
| 代理商： | M2035S-E3/4W |
M2035S & M2045S
Vishay General Semiconductor
Document Number: 88953
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
High-Voltage Trench MOS Barrier Schottky Rectifier
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection applications.
MECHANICAL DATA
Case: TO-220AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
35 V, 45 V
IFSM
200 A
VF at IF = 20 A
0.55 V
TJ max.
150 °C
TO-220AB
1
2
3
1
2
CASE
3
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
M2035S
M2045S
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
V
Maximum average forward rectified current (Fig. 1)
IF(AV)
20
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
A
Peak repetitive reverse current per leg at tp = 2 s, 1 kHz
IRRM
2.0
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
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