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参数资料
| 型号： | M2035S-E3/4W |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 20 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 121K |
| 代理商： | M2035S-E3/4W |
M2035S & M2045S
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88953
Revision: 19-May-08
2
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Instantaneous forward voltage (1)
IF = 10 A
IF = 20 A
TJ = 25 °C
VF
0.52
0.62
-
0.70
V
IF = 10 A
IF = 20 A
TJ = 125 °C
0.42
0.55
-
0.61
Maximum reverse current at rated VR
(2)
TJ = 25 °C
TJ = 125 °C
IR
80
24
200
35
A
mA
Typical junction capacitance
4.0 V, 1 MHz
CJ
700
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
M2035S
M2045S
UNIT
Typical thermal resistance
RθJC
2.0
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (G)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
M2045S-E3/4W
1.877
4W
50/tube
Tube
Figure 1. Forward Current Derating Curve
0
5
10
15
20
25
20
40
60
80
100
120
140
160
Case Temperature (°C)
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
300
250
200
150
100
50
0
1
10
100
Number of Cycles at 60 Hz
P
eak
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
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