参数资料
型号: M25P16-VME3TP
厂商: 意法半导体
元件分类: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位统一部门,串行闪存
文件页数: 16/55页
文件大小: 335K
代理商: M25P16-VME3TP
Memory organization
M25P16
16/55
5
Memory organization
The memory is organized as:
2 097 152 bytes (8 bits each)
32 sectors (512 Kbits, 65536 bytes each)
8192 pages (256 bytes each).
Each page can be individually programmed (bits are programmed from 1 to 0). The device is
Sector or Bulk Erasable (bits are erased from 0 to 1) but not Page Erasable.
Figure 7.
Block diagram
AI04987
HOLD
S
W
Control Logic
High Voltage
Generator
I/O Shift Register
Address Register
and Counter
256 Byte
Data Buffer
256 Bytes (Page Size)
X Decoder
Y
Size of the
read-only
memory area
C
D
Q
Status
Register
00000h
1FFFFFh
000FFh
相关PDF资料
PDF描述
M25P16-VMF3G 4 Mbit Uniform Sector, Serial Flash Memory
M25P16-VMF3P 4 Mbit Uniform Sector, Serial Flash Memory
M25P16-VMF3TG 4 Mbit Uniform Sector, Serial Flash Memory
M25P16-VMF3TP 4 Mbit Uniform Sector, Serial Flash Memory
M25P16-VMN3G 4 Mbit Uniform Sector, Serial Flash Memory
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