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参数资料
| 型号： | M25P16-VME3TP |
| 厂商： | 意法半导体 |
| 元件分类： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位统一部门，串行闪存 |
| 文件页数： | 34/55页 |
| 文件大小： | 335K |
| 代理商： | M25P16-VME3TP |
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Instructions
M25P16
34/55
Figure 19.
Release from Deep Power-down and Read Electronic Signature (RES) instruction
sequence and data-out sequence
1.
The value of the 8-bit Electronic Signature, for the M25P16, is 14h.
Figure 20.
Release from Deep Power-down (RES) instruction sequence
Driving Chip Select (S) High after the 8
-
bit instruction byte has been received by the device, but before
the whole of the 8-bit Electronic Signature has been transmitted for the first time (as shown in
Figure 20
),
still ensures that the device is put into Stand-by Power mode. If the device was not previously in the Deep
Power-down mode, the transition to the Stand-by Power mode is immediate. If the device was previously
in the Deep Power-down mode, though, the transition to the Stand-by Power mode is delayed by t
RES1
,
and Chip Select (S) must remain High for at least t
RES1
(max), as specified in
Table 15
. Once in the
Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute
instructions.
C
D
AI04047C
S
Q
23
2
1
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35
22 21
3
2
1
0
36 37 38
7
6
5
4
3
2
0
1
High Impedance
Electronic Signature Out
Instruction
3 Dummy Bytes
0
MSB
Stand-by Mode
Deep Power-down Mode
MSB
t
RES2
C
D
AI04078B
S
2
1
3
4
5
6
7
0
t
RES1
Stand-by Mode
Deep Power-down Mode
Q
High Impedance
Instruction
相关PDF资料 |
PDF描述 |
|---|---|
| M25P16-VMF3G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMF3P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMF3TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMF3TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMN3G | 4 Mbit Uniform Sector, Serial Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M25P16VME6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P16-VME6 | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16 Mbit, serial Flash memory, 75 MHz SPI bus interface |
| M25P16VME6G | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P16-VME6G | 功能描述:闪存 16MBIT SERIEL FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M25P16-VME6G_NUD | 制造商:Micron Technology Inc 功能描述: |
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