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参数资料
| 型号： | M25P16-VMW6TP |
| 厂商： | 意法半导体 |
| 元件分类： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位统一部门，串行闪存 |
| 文件页数： | 30/55页 |
| 文件大小： | 335K |
| 代理商： | M25P16-VMW6TP |
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Instructions
M25P16
30/55
6.9
Sector Erase (SE)
The Sector Erase (SE) instruction sets to 1 (FFh) all bits inside the chosen sector. Before it
can be accepted, a Write Enable (WREN) instruction must previously have been executed.
After the Write Enable (WREN) instruction has been decoded, the device sets the Write
Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code, and three address bytes on Serial Data Input (D). Any address inside the
Sector (see
Table 3
) is a valid address for the Sector Erase (SE) instruction. Chip Select (S)
must be driven Low for the entire duration of the sequence.
The instruction sequence is shown in
Figure 16
.
Chip Select (S) must be driven High after the eighth bit of the last address byte has been
latched in, otherwise the Sector Erase (SE) instruction is not executed. As soon as Chip
Select (S) is driven High, the self-timed Sector Erase cycle (whose duration is t
SE
) is
initiated. While the Sector Erase cycle is in progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1
during the self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified
time before the cycle is completed, the Write Enable Latch (WEL) bit is reset.
A Sector Erase (SE) instruction applied to a page which is protected by the Block Protect
(BP2, BP1, BP0) bits (see
Table 2
and
Table 3
) is not executed.
Figure 16.
Sector Erase (SE)
instruction sequence
1.
Address bits A23 to A21 are Don’t Care.
24 Bit Address
C
D
AI03751D
S
2
1
3
4
5
6
7
8
9
29 30 31
Instruction
0
23 22
2
0
1
MSB
相关PDF资料 |
PDF描述 |
|---|---|
| M25P16-VME3G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VME3P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VME3TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VME3TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMF3G | 4 Mbit Uniform Sector, Serial Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M25P16-VMW6YG | 制造商:Micron Technology Inc 功能描述:16 MBIT, SERIAL FLASH MEMORY, 75 MHZ SPI BUS INTERFACE - Trays |
| M25P20 | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:2 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface |
| M25P20-AV3D11 | 制造商:Micron Technology Inc 功能描述:2MX1 NOR FLASH DIE-COM AUTOMOTIVE TEMP 3.0V - Trays |
| M25P20-ESU21/90 | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Gel-pak, waffle pack, wafer, diced wafer on film |
| M25P20S-VMN6TPB | 制造商:Micron Technology Inc 功能描述: |
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