参数资料
型号: M25P16-VMW6TP
厂商: 意法半导体
元件分类: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位统一部门,串行闪存
文件页数: 38/55页
文件大小: 335K
代理商: M25P16-VMW6TP
DC and AC parameters
M25P16
38/55
10
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC Characteristic tables that
follow are derived from tests performed under the Measurement Conditions summarized in
the relevant tables. Designers should check that the operating conditions in their circuit
match the measurement conditions when relying on the quoted parameters.
Table 10.
Table 11.
Table 12.
1.
Output Hi-Z is defined as the point where data out is no longer driven.
Figure 22.
AC measurement I/O waveform
Table 13.
Operating conditions
Symbol
Parameter
Min.
Max.
Unit
V
CC
Supply Voltage
2.7
3.6
V
T
A
Ambient Operating Temperature
grade 3
–40
125
°C
grade 6
–40
85
°C
Data retention and endurance
Parameter
Condition
Min.
Max.
Unit
Erase/Program cycles
Device Grade 6
100 000
cycles per sector
Device Grade 3
10 000
Data Retention
at 55 °C
20
years
AC measurement conditions
Symbol
Parameter
Min.
Max.
Unit
C
L
Load Capacitance
30
pF
Input Rise and Fall Times
5
ns
Input Pulse Voltages
0.2V
CC
to 0.8V
CC
V
Input Timing Reference Voltages
0.3V
CC
to 0.7V
CC
V
Output Timing Reference Voltages
V
CC
/ 2
V
Capacitance
(1)
1.
Sampled only, not 100% tested, at T
A
=25°C and a frequency of 20MHz.
Symbol
Parameter
Test Condition
Min
.
Max
.
Unit
C
OUT
Output Capacitance (Q)
V
OUT
= 0 V
8
pF
C
IN
Input Capacitance (other pins)
V
IN
= 0 V
6
pF
AI07455
0.8VCC
0.2VCC
0.7VCC
0.5VCC
0.3VCC
Input and Output
Timing Reference Levels
Input Levels
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