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参数资料
| 型号： | M25P20VMN6T |
| 厂商： | 意法半导体 |
| 元件分类： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位统一部门，串行闪存 |
| 文件页数： | 14/34页 |
| 文件大小： | 217K |
| 代理商： | M25P20VMN6T |
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M25P05-A
14/34
Figure 12. Read Data Bytes (READ) Instruction Sequence and Data-Out Sequence
Note: 1. Address bits A23 to A16 must be set to 00h.
Read Data Bytes (READ)
The device is first selected by driving Chip Select
(S) Low. The instruction code for the Read Data
Bytes (READ) instruction is followed by a 3-byte
address (A23-A0), each bit being latched-in during
the rising edge of Serial Clock (C). Then the mem-
ory contents, at that address, is shifted out on Se-
rial Data Output (Q), each bit being shifted out, at
a maximum frequency f
R
, during the falling edge of
Serial Clock (C).
The instruction sequence is shown in Figure 12.
The first byte addressed can be at any location.
The address is automatically incremented to the
next higher address after each byte of data is shift-
ed out. The whole memory can, therefore, be read
with a single Read Data Bytes (READ) instruction.
There is no address roll-over; when the highest
address (0FFFFh) is reached, the instruction
should be terminated.
The Read Data Bytes (READ) instruction is termi-
nated by driving Chip Select (S) High. Chip Select
(S) can be driven High at any time during data out-
put. Any Read Data Bytes (READ) instruction,
while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on
the cycle that is in progress.
C
D
AI03748D
S
Q
23
2
1
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35
22 21
3
2
1
0
36 37 38
7
6
5
4
3
1
7
0
High Impedance
Data Out 1
Instruction
24-Bit Address
0
MSB
MSB
2
39
Data Out 2
相关PDF资料 |
PDF描述 |
|---|---|
| M25P20VMP6T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40VMN6T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P80VMN6T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P32 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40 | 4 Mbit Uniform Sector, Serial Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M25P20-VMN6T | 功能描述:闪存 3.0V 2M (256Kx8) RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M25P20VMN6TG | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P20-VMN6TG/X | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:2 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface |
| M25P20VMN6TP | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P20-VMN6TP | 功能描述:闪存 Lo-Volt 2M (256Kx8) RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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