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参数资料
| 型号： | M25P20VMN6T |
| 厂商： | 意法半导体 |
| 元件分类： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位统一部门，串行闪存 |
| 文件页数： | 19/34页 |
| 文件大小： | 217K |
| 代理商： | M25P20VMN6T |
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M25P05-A
Figure 17. Deep Power-down (DP) Instruction Sequence
Deep Power-down (DP)
Executing the Deep Power-down (DP) instruction
is the only way to put the device in the lowest con-
sumption mode (the Deep Power-down mode). It
can also be used as an extra software protection
mechanism, while the device is not in active use,
since in this mode, the device ignores all Write,
Program and Erase instructions.
Driving Chip Select (S) High deselects the device,
and puts the device in the Standby mode (if there
is no internal cycle currently in progress). But this
mode is not the Deep Power-down mode. The
Deep Power-down mode can only be entered by
executing the Deep Power-down (DP) instruction,
to reduce the standby current (from I
CC1
to I
CC2
,
as specified in Table 12).
Once the device has entered the Deep Power-
down mode, all instructions are ignored except the
Release from Deep Power-down and Read Elec-
tronic Signature (RES) instruction. This releases
the device from this mode. The Release from
Deep Power-down and Read Electronic Signature
(RES) instruction also allows the Electronic Signa-
ture of the device to be output on Serial Data Out-
put (Q).
The Deep Power-down mode automatically stops
at Power-down, and the device always Powers-up
in the Standby mode.
The Deep Power-down (DP) instruction is entered
by driving Chip Select (S) Low, followed by the in-
struction code on Serial Data Input (D). Chip Se-
lect (S) must be driven Low for the entire duration
of the sequence.
The instruction sequence is shown in Figure 17.
Chip Select (S) must be driven High after the
eighth bit of the instruction code has been latched
in, otherwise the Deep Power-down (DP) instruc-
tion is not executed. As soon as Chip Select (S) is
driven High, it requires a delay of t
DP
before the
supply current is reduced to I
CC2
and the Deep
Power-down mode is entered.
Any Deep Power-down (DP) instruction, while an
Erase, Program or Write cycle is in progress, is re-
jected without having any effects on the cycle that
is in progress.
C
D
AI03753D
S
2
1
3
4
5
6
7
0
t
DP
Deep Power-down Mode
Stand-by Mode
Instruction
相关PDF资料 |
PDF描述 |
|---|---|
| M25P20VMP6T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40VMN6T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P80VMN6T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P32 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40 | 4 Mbit Uniform Sector, Serial Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M25P20-VMN6T | 功能描述:闪存 3.0V 2M (256Kx8) RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M25P20VMN6TG | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P20-VMN6TG/X | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:2 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface |
| M25P20VMN6TP | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P20-VMN6TP | 功能描述:闪存 Lo-Volt 2M (256Kx8) RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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