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参数资料
| 型号： | M25P40SVMN6P/4 |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 512K X 8 SPI BUS SERIAL EEPROM, PDSO8 |
| 封装： | 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8 |
| 文件页数： | 10/57页 |
| 文件大小： | 1160K |
| 代理商： | M25P40SVMN6P/4 |
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Instructions
M25P40
18/57
6
Instructions
All instructions, addresses and data are shifted in and out of the device, most significant bit
first.
Serial Data input (D) is sampled on the first rising edge of Serial Clock (C) after Chip Select
(S) is driven Low. Then, the one-byte instruction code must be shifted in to the device, most
significant bit first, on Serial Data input (D), each bit being latched on the rising edges of
Serial Clock (C).
The instruction set is listed in Table 4.
Every instruction sequence starts with a one-byte instruction code. Depending on the
instruction, this might be followed by address bytes, or by data bytes, or by both or none.
Chip Select (S) must be driven High after the last bit of the instruction sequence has been
shifted in.
In the case of a Read Data Bytes (READ), Read Data Bytes at Higher Speed (Fast_Read),
Read Identification (RDID), Read Status Register (RDSR) or Release from Deep Power-
down, and Read Electronic Signature (RES) instruction, the shifted-in instruction sequence
is followed by a data-out sequence. Chip Select (S) can be driven High after any bit of the
data-out sequence is being shifted out.
In the case of a Page Program (PP), Sector Erase (SE), Bulk Erase (BE), Write Status
Register (WRSR), Write Enable (WREN), Write Disable (WRDI) or Deep Power-down (DP)
instruction, Chip Select (S) must be driven High exactly at a byte boundary, otherwise the
instruction is rejected, and is not executed. That is, Chip Select (S) must driven High when
the number of clock pulses after Chip Select (S) being driven Low is an exact multiple of
eight.
All attempts to access the memory array during a Write Status Register cycle, Program
cycle or Erase cycle are ignored, and the internal Write Status Register cycle, Program
cycle or Erase cycle continues unaffected.
相关PDF资料 |
PDF描述 |
|---|---|
| M25P40SVMN3G/4A | 512K X 8 SPI BUS SERIAL EEPROM, PDSO8 |
| M25P40-VMN6TG/X | 512K X 8 SPI BUS SERIAL EEPROM, PDSO8 |
| M25P40VMF6 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40VMF6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40VMF6P | 4 Mbit Uniform Sector, Serial Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M25P40-VMB3TPB | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel |
| M25P40-VMB3TPB TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 75MHZ 8UFDFPN |
| M25P40-VMB6TPB | 制造商:Micron Technology Inc 功能描述:4MBIT SPI NOR FLASH 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE FLASH - Cut TR (SOS) 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE FLASH - Tape and Reel 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 2.5V/3.3V 4Mbit 512K x 8bit 8ns 8-Pin UFDFPN EP T/R |
| M25P40-VMB6TPB TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 75MHZ 8UFDFPN |
| M25P40-VMB6Txx | 制造商:MICRON 制造商全称:Micron Technology 功能描述:Micron M25P40 Serial Flash Embedded Memory |
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