参数资料
型号: M25PE10-VMP6TG
厂商: 意法半导体
元件分类: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位统一部门,串行闪存
文件页数: 45/60页
文件大小: 310K
代理商: M25PE10-VMP6TG
M25PE20, M25PE10
Power-up and power-down
45/60
Figure 25.
Power-up timing
Table 13.
Power-up timing and V
WI
threshold
Symbol
Parameter
Min.
Max.
Unit
t
VSL(1)
t
PUW(1)
V
WI(1)
1.
These parameters are characterized only, over the temperature range –40°C to +85°C.
V
CC
(min) to S low
30
μs
Time delay before the first Write, Program or Erase instruction
1
10
ms
Write Inhibit Voltage
1.5
2.5
V
VCC
AI04009C
VCC(min)
VWI
Reset State
of the
Device
Chip Selection Not Allowed
Program, Erase and Write Commands are Rejected by the Device
tVSL
tPUW
time
Read Access allowed
Device fully
accessible
VCC(max)
相关PDF资料
PDF描述
M25PE10-VMP6TP 4 Mbit Uniform Sector, Serial Flash Memory
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