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参数资料
| 型号： | M25PE10-VMP6TG |
| 厂商： | 意法半导体 |
| 元件分类： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位统一部门，串行闪存 |
| 文件页数： | 6/60页 |
| 文件大小： | 310K |
| 代理商： | M25PE10-VMP6TG |
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Description
M25PE20, M25PE10
6/60
1
Description
The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) Serial
Paged Flash memories, respectively. They are accessed by a high speed SPI-compatible
bus.
The memories can be written or programmed 1 to 256 Bytes at a time, using the Page Write
or Page Program instruction. The Page Write instruction consists of an integrated Page
Erase cycle followed by a Page Program cycle.
The M25PE20 memory is organized as 4 sectors, each containing 256 pages. Each page is
256 Bytes wide. Thus, the whole memory can be viewed as consisting of 1024 pages, or
262,144 Bytes.
The M25PE10 memory is organized as 2 sectors, each containing 256 pages. Each page is
256 Bytes wide. Thus, the whole memory can be viewed as consisting of 512 pages, or 131,
072 Bytes.
The memories can be erased a page at a time, using the Page Erase instruction, a
subsector at a time, using the SubSector Erase instruction, a sector at a time, using the
Sector Erase instruction or as a whole, using the Bulk Erase instruction.
The memory can be Write Protected by either Hardware or Software using a mix of volatile
and non-volatile protection features, depending on the application needs. The protection
granularity is of 64 Kbytes (sector granularity).
In order to meet environmental requirements, ST offers the M25PE20 and M25PE10 in
ECOPACK packages. ECOPACK packages are Lead-free and RoHS compliant.
ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
Important note
This datasheet details the functionality of the M25PE20 and M25PE10 devices, based on
the previous T7X process or based on the current T9HX process. Delivery of parts in T9HX
process starts from August 2007.
What are the changes
The M25PE10/M25PE20 in T9HX process offers the following additional features:
the whole memory array is partitioned into 4-Kbyte subsectors
five new instructions: Write Status Register (WRSR), Write to Lock Register (WRLR),
Read Lock Register (RDLR), 4-Kbyte SubSector Erase (SSE) and Bulk Erase (BE)
Status Register: 3 bits can be written (BP0, BP1, SRWD)
WP input (pin 3): Write protection limits are extended, depending on the value of the
BP0, BP1, SRWD bits. The WP Write protection remains the same if bits (BP1, BP0)
are set to (0, 1) or (1, 0)
VFQFPN8 6 × 5 mm package added
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相关PDF资料 |
PDF描述 |
|---|---|
| M25PE10-VMP6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20_07 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20-VMN6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20-VMN6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20-VMN6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M25PE10-VMP6TP | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE16 | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout |
| M25PE16-VMP6G | 功能描述:闪存 16 Mbit Lo Vltg Page Erasable Seral 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M25PE16-VMP6P | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout |
| M25PE16-VMP6TG | 功能描述:闪存 16 Mbit Lo Vltg Page Erasable Seral 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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