参数资料
型号: M25PE10-VMP6TP
厂商: 意法半导体
元件分类: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位统一部门,串行闪存
文件页数: 49/60页
文件大小: 310K
代理商: M25PE10-VMP6TP
M25PE20, M25PE10
DC and AC parameters
49/60
Table 19.
DC characteristics
Symbol
Parameter
Test condition (in addition to
those in
Table 16
)
Min.
Max.
Unit
I
LI
Input Leakage Current
± 2
μA
I
LO
Output Leakage Current
± 2
μA
I
CC1
Standby Current
(Standby and Reset
modes)
S = V
CC
, V
IN
= V
SS
or
V
CC
50
μA
I
CC2
Deep Power-down
Current
S = V
CC
, V
IN
= V
SS
or
V
CC
10
μA
I
CC3
Operating Current
(FAST_READ)
C = 0.1V
CC
/ 0.9.V
CC
at 25 MHz,
Q = open
6
mA
C = 0.1V
CC
/ 0.9.V
CC
at 33 MHz,
Q = open
8
I
CC4
Operating Current (PW)
S = V
CC
15
mA
I
CC5
Operating Current (SE)
S = V
CC
15
mA
V
IL
Input Low Voltage
– 0.5
0.3V
CC
V
V
IH
Input High Voltage
0.7V
CC
V
CC
+0.4
V
V
OL
Output Low Voltage
I
OL
= 1.6 mA
I
OH
= –100
μ
A
0.4
V
V
OH
Output High Voltage
V
CC
–0.2
V
相关PDF资料
PDF描述
M25PE20_07 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMN6G 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMN6P 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMN6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMN6TP 4 Mbit Uniform Sector, Serial Flash Memory
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