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参数资料
| 型号： | M27V102-90B6 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 64K X 16 OTPROM, 90 ns, PDIP40 |
| 封装： | 0.600 INCH, PLASTIC, DIP-40 |
| 文件页数： | 12/15页 |
| 文件大小： | 169K |
| 代理商： | M27V102-90B6 |
Obsolete
Product(s)
- Obsolete
Product(s)
M27V102
6/15
Figure 5. Read Mode AC Waveforms
AI00705B
tAXQX
tEHQZ
A0-A15
E
G
Q0-Q15
tAVQV
tGHQZ
tGLQV
tELQV
VALID
Hi-Z
VALID
Table 8B. Read Mode AC Characteristics (1)
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 3.3V ± 10%; VPP = VCC)
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. Sampled only, not 100% tested.
Symbol
Alt
Parameter
Test Condition
M27V102
Unit
-120
-150
-200
Min
Max
Min
Max
Min
Max
tAVQV
tACC Address Valid to Output Valid
E = VIL, G = VIL
120
150
200
ns
tELQV
tCE
Chip Enable Low to Output Valid
G = VIL
120
150
200
ns
tGLQV
tOE
Output Enable Low to Output Valid
E = VIL
50
60
90
ns
tEHQZ
(2)
tDF
Chip Enable High to Output Hi-Z
G = VIL
040050
0
70
ns
tGHQZ
(2)
tDF
Output Enable High to Output Hi-Z
E = VIL
040050
0
70
ns
tAXQX
tOH
Address Transition to Output
Transition
E = VIL, G = VIL
00
0
ns
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs require careful decoupling of the
devices. The supply current, ICC, has three seg-
ments that are of interest to the system designer:
the standby current level, the active current level,
and transient current peaks that are produced by
the falling and rising edges of E. The magnitude of
transient current peaks is dependent on the ca-
pacitive and inductive loading of the device at the
output. The associated transient voltage peaks
can be suppressed by complying with the two line
output control and by properly selected decoupling
capacitors. It is recommended that a 0.1F ceram-
ic capacitor be used on every device between VCC
and VSS. This should be a high frequency capaci-
tor of low inherent inductance and should be
placed as close to the device as possible. In addi-
tion, a 4.7F bulk electrolytic capacitor should be
used between VCC and VSS for every eight devic-
es. The bulk capacitor should be located near the
power supply connection point.The purpose of the
bulk capacitor is to overcome the voltage drop
caused by the inductive effects of PCB traces.
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相关代理商/技术参数 |
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|---|---|
| M27V102-90B6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27V102-90F1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27V102-90F6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27V102-90K1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27V102-90K6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM |
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