参数资料
型号: M27V256-100B6TR
厂商: 意法半导体
英文描述: 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
中文描述: 256千位的32KB × 8低压紫外线可擦写可编程只读存储器和OTP存储器
文件页数: 1/15页
文件大小: 103K
代理商: M27V256-100B6TR
1/15
May 1998
M27V256
256 Kbit (32Kb x 8) Low Voltage UV EPROM and OTP EPROM
s
LOW VOLTAGE READ OPERATION:
3V to 3.6V
s
FAST ACCESS TIME: 90ns
s
LOW POWER CONSUMPTION:
– Active Current 10mA at 5MHz
– Standby Current 10
A
s
PROGRAMMING VOLTAGE: 12.75V
± 0.25V
s
PROGRAMMING TIME: 100
s/byte (typical)
s
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 8Dh
DESCRIPTION
The M27V256 is a low voltage 256 Kbit EPROM
offered in the two ranges UV (ultra violet erase)
and OTP (one time programmable). It is ideally
suited for microprocessor systems and is orga-
nized as 32,768 by 8 bits.
The M27V256 operates in the read mode with a
supply voltage as low as 3V. The decrease in op-
erating power allows either a reduction of the size
of the battery or an increase in the time between
battery recharges.
The FDIP28W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
Figure 1. Logic Diagram
AI01908
15
A0-A14
Q0-Q7
VPP
VCC
M27V256
G
E
VSS
8
Table 1. Signal Names
A0-A14
Address Inputs
Q0-Q7
Data Outputs
E
Chip Enable
G
Output Enable
VPP
Program Supply
VCC
Supply Voltage
VSS
Ground
1
28
1
FDIP28W (F)
PDIP28 (B)
PLCC32 (K)
TSOP28 (N)
8 x 13.4mm
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M27V256-100K6TR 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
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