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参数资料
| 型号： | M27V256-100B6TR |
| 厂商： | 意法半导体 |
| 英文描述： | 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 256千位的32KB × 8低压紫外线可擦写可编程只读存储器和OTP存储器 |
| 文件页数： | 15/15页 |
| 文件大小： | 103K |
| 代理商： | M27V256-100B6TR |
9/15
M27V256
On-Board Programming
The M27V256 can be directly programmed in the
application circuit. See the relevant Application
Note AN620.
Electronic Signature
The Electronic Signature (ES) mode allows the
reading out of a binary code from an EPROM that
will identify its manufacturer and type. This mode
is intended for use by programming equipment to
automatically match the device to be programmed
with its corresponding programming algorithm.
The ES mode is functional in the 25
°C ± 5°C am-
bient temperature range that is required when pro-
gramming the M27V256. To activate the ES mode,
the programming equipment must force 11.5V to
12.5V on address line A9 of the M27V256, with
VCC =VPP = 5V. Two identifier bytes may then be
sequenced from the device outputs by toggling ad-
dress line A0 from VIL to VIH. All other address
lines must be held at VIL during Electronic Signa-
ture mode. Byte 0 (A0=VIL) represents the manu-
facturer code and byte 1 (A0=VIH) the device
identifier
code.
For
the
STMicroelectronics
M27V256, these two identifier bytes are given in
Table 4 and can be read-out on outputs Q0 to Q7.
Note that the M27V256 and M27C256B have the
same identifier bytes.
ERASURE OPERATION (applies for UV EPROM)
The erasure characteristics of the M27V256 is
such that erasure begins when the cells are ex-
posed to light with wavelengths shorter than ap-
proximately 4000 . It should be noted that
sunlight and some type of fluorescent lamps have
wavelengths in the 3000-4000 range. Research
shows that constant exposure to room level fluo-
rescent lighting could erase a typical M27V256 in
about 3 years, while it would take approximately 1
week to cause erasure when exposed to direct
sunlight. If the M27V256 is to be exposed to these
types of lighting conditions for extended periods of
time, it is suggested that opaque labels be put over
the M27V256 window to prevent unintentional era-
sure. The recommended erasure procedure for
the M27V256 is exposure to short wave ultraviolet
light which has wavelength 2537. The integrated
dose (i.e. UV intensity x exposure time) for erasure
should be a minimum of 15 W-sec/cm
2. The era-
sure time with this dosage is approximately 15 to
20 minutes using an ultraviolet lamp with 12000
W/cm2 power rating. The M27V256 should be
placed within 2.5 cm (1 inch) of the lamp tubes
during the erasure. Some lamps have a filter on
their tubes which should be removed before era-
sure.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M27V256-100F1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27V256-100F6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27V256-100K1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27V256-100K6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27V256-100N1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM |
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