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参数资料
| 型号： | M27V160-200B1TR |
| 厂商： | 意法半导体 |
| 英文描述： | 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 16兆位的2Mb x8或1兆x16低压紫外线可擦写可编程只读存储器和OTP存储器 |
| 文件页数： | 4/15页 |
| 文件大小： | 103K |
| 代理商： | M27V160-200B1TR |
M27V160
4/15
Standby Mode
The M27V160 hasa standby mode which reduces
the activecurrent from20mAto 20
μ
A with lowvolt-
age operation V
CC
≤
3.6V, see Read Mode DC
Characteristics table for details.The M27V160 is
placed in the standby mode by applying a CMOS
high signal to the E input. When in the standby
mode, the outputs are in a high impedance state,
independent of the G input.
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, this product features a 2 line con-
trol function which accommodates the use of mul-
tiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control
lines, Eshould be decoded and used as theprima-
ry device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. Thisensures that all deselect-
ed memory devices are in their lowpower standby
mode and that the output pins are only active
when data is required from a particular memory
device.
Table 5. AC Measurement Conditions
High Speed
Standard
Input Rise and Fall Times
≤
10ns
≤
20ns
Input Pulse Voltages
0 to 3V
0.4V to 2.4V
Input and Output Timing Ref. Voltages
1.5V
0.8V and 2V
Figure 3. AC Testing Input Output Waveform
AI01822
3V
High Speed
0V
1.5V
2.4V
Standard
0.4V
2.0V
0.8V
Figure 4. AC Testing Load Circuit
AI01823B
1.3V
OUT
CL
CL= 30pF for High Speed
CL= 100pF for Standard
CLincludes JIG capacitance
3.3k
1N914
DEVICE
UNDER
TEST
Table 6. Capacitance
(1)
(T
A
= 25
°
C, f = 1 MHz)
Symbol
Note: 1. Sampled only, not 100% tested.
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance (except BYTEV
PP
)
V
IN
= 0V
10
pF
Input Capacitance (BYTEV
PP
)
V
IN
= 0V
120
pF
C
OUT
Output Capacitance
V
OUT
= 0V
12
pF
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| M27V160-200B6TR | 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-200F1TR | 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-200F6TR | 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M27V160-200B6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-200F1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-200F6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-200M1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-200M6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
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