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参数资料
| 型号： | M27V160-200F6TR |
| 厂商： | 意法半导体 |
| 英文描述： | 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 16兆位的2Mb x8或1兆x16低压紫外线可擦写可编程只读存储器和OTP存储器 |
| 文件页数： | 8/15页 |
| 文件大小： | 103K |
| 代理商： | M27V160-200F6TR |
M27V160
8/15
Table 9. Programming Mode DC Characteristics
(1)
(T
A
= 25
°
C; V
CC
= 6.25V
±
0.25V; V
PP
= 12.5V
±
0.25V)
Symbol
Parameter
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Table 10. ProgrammingMode AC Characteristics
(1)
(T
A
= 25
°
C; V
CC
= 6.25V
±
0.25V; V
PP
= 12.5V
±
0.25V)
Symbol
Alt
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0
≤
V
IN
≤
V
CC
±
1
μ
A
I
CC
Supply Current
50
mA
I
PP
Program Current
E = V
IL
50
mA
V
IL
Input Low Voltage
–0.3
0.8
V
V
IH
Input High Voltage
2.4
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage TTL
I
OH
= –2.5mA
3.6
V
V
ID
A9 Voltage
11.5
12.5
V
Parameter
Test Condition
Min
Max
Unit
t
AVEL
t
AS
Address Valid to Chip Enable Low
2
μ
s
t
QVEL
t
DS
Input Valid to Chip Enable Low
2
μ
s
t
VPHAV
t
VPS
V
PP
High to Address Valid
2
μ
s
t
VCHAV
t
VCS
V
CC
High to Address Valid
2
μ
s
t
ELEH
t
PW
Chip Enable Program Pulse Width
45
55
μ
s
t
EHQX
t
DH
Chip Enable High to Input Transition
2
μ
s
t
QXGL
t
OES
Input Transition to Output Enable Low
2
μ
s
t
GLQV
t
OE
Output Enable Low to Output Valid
120
ns
t
GHQZ(2)
t
DFP
Output Enable High to Output Hi-Z
0
130
ns
t
GHAX
t
AH
Output Enable High to Address
Transition
0
ns
Programming
The M27V160 has been designed to be fully com-
patible with the M27C160. As a result the
M27V160 can be programmed as the M27C160
on the same programming equipments applying
12.75V onV
PP
and 6.25Von V
CC
by the use of the
same PRESTO III algorithm. When delivered (and
after each erasure for UV EPROM), all bits of the
M27V160 are inthe ’1’state. Data is introduced by
selectively programming ’0’s to the desired bit lo-
cations. Although only ’0’s will be programmed,
both ’1’s and ’0’s can be present in the data word.
The only way to change a ’0’to a ’1’ is by die expo-
sure to ultraviolet
light
M27V160 is in the programming mode when V
pp
input is at 12.5V, G is at V
IH
and Eis pulsed to V
IL
.
The data to beprogrammed is applied to 16 bits in
parallel to the data output pins. The levels required
for the address and data inputs are TTL. V
CC
is
specified to be 6.25V
±
0.25V.
(UV EPROM).
The
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PDF描述 |
|---|---|
| M27V160-200M1TR | 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M27V160-200M1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-200M6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-200XB1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-200XB6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-200XF1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
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