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参数资料
| 型号： | M27V160-200M6TR |
| 厂商： | 意法半导体 |
| 英文描述： | 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 16兆位的2Mb x8或1兆x16低压紫外线可擦写可编程只读存储器和OTP存储器 |
| 文件页数： | 9/15页 |
| 文件大小： | 103K |
| 代理商： | M27V160-200M6TR |
9/15
M27V160
PRESTO III Programming Algorithm
The PRESTO III Programming Algorithm allows
the whole array to be programed with a guaran-
teed margin in a typical time of 52.5 seconds. Pro-
gramming with PRESTO III consists of applying a
sequence of 50
μ
s program pulses to each word
until a correct verify occurs (see Figure 9).
During programing and verify operation a MAR-
GIN MODE circuit is automatically activated to
guarantee thateach cell isprogramed withenough
margin. Nooverprogram pulse is applied since the
verify in MARGIN MODE at V
CC
much higher than
3.6V provides the necessary margin to each pro-
grammed cell.
Program Inhibit
Programming of multiple M27V160s in parallel
with different data is also easily accomplished. Ex-
cept for E, all likeinputs including G of the parallel
M27V160 may be common. A TTL low level pulse
applied to a M27V160’s E input and V
PP
at 12.5V,
will program that M27V160.A high level E input in-
hibits the other M27V160s from being pro-
grammed.
Program Verify
A verify (read) should be performed on the pro-
grammed bits to determine that theywere correct-
ly programmed. The verify is accomplished with E
at V
IH
and G at V
IL
, V
PP
at 12.5V and V
CC
at
6.25V.
Figure 8. Programming and Verify Modes AC Waveforms
tAVEL
VALID
AI00744
A0-A19
Q0-Q15
BYTEVPP
VCC
G
DATA IN
DATA OUT
E
tQVEL
tVPHAV
tVCHAV
tEHQX
tELEH
tGLQV
tQXGL
tGHQZ
tGHAX
PROGRAM
VERIFY
Figure 9. Programming Flowchart
AI00901B
n = 0
Last
Addr
VERIFY
E = 50
μ
s Pulse
++n
= 25
++ Addr
VCC= 6.25V, VPP= 12.5V
FAIL
CHECK ALL WORDS
BYTEVPP=VIH
1st: VCC= 5V
2nd: VCC= 3V
YES
NO
YES
NO
YES
NO
相关PDF资料 |
PDF描述 |
|---|---|
| M27V160-100XM1TR | 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-150XM1TR | 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-200XM1TR | 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V201-100XK6TR | 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27V201-120XK6TR | 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M27V160-200XB1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-200XB6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-200XF1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-200XF6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
| M27V160-200XM1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM |
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