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参数资料
| 型号： | M28LV16 |
| 厂商： | 意法半导体 |
| 元件分类： | DRAM |
| 英文描述： | 16K (2K x 8) Parallel EEPROM with Software Data Protection(16K低压并行EEPROM,软件数据保护) |
| 中文描述： | 16K的（2K × 8）与软件数据保护（16K的低压并行的EEPROM，软件数据保护并行的EEPROM） |
| 文件页数： | 3/17页 |
| 文件大小： | 123K |
| 代理商： | M28LV16 |
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
– 40 to 85
°
C
T
STG
Storage Temperature Range
– 65 to 150
°
C
V
CC
Supply Voltage
–0.3 to 6.5
V
V
IO
Input/Output Voltage
– 0.3 to V
CC
+0.6
V
V
I
Input Voltage
–0.3 to 6.5
V
V
ESD
Electrostatic Discharge Voltage (Human Body model)
(2)
4000
V
Note:
1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute MaximumRatings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure toAbsolute Maximum Rating
conditions for extended periods may affect devicereliability. Refer also to the SGS-THOMSON SURE Program and other
relevant quality documents.
2. 100pF through 1500
; MIL-STD-883C, 3015.7
Table 2. Absolute Maximum Ratings
(1)
Mode
E
G
W
DQ0 - DQ7
Standby
1
X
X
Hi-Z
Output Disable
X
1
X
Hi-Z
Write Disable
X
X
1
Hi-Z
Read
0
0
1
Data Out
Write
0
1
0
Data In
Note:
1. 0 = V
IL
; 1 = V
IH
; X =V
IL
or V
IH
.
Table 3. OperatingModes
(1)
PINDESCRIPTION
Addresses (A0-A10).
The address inputs select
an 8-bit memory location during a read or write
operation.
Chip Enable (E).
The chip enable input must be
low to enableall read/write operations.When Chip
Enableis high, power consumptionis reduced.
Output Enable (G).
The Output Enable inputcon-
trols the data output buffersand is used to initiate
read operations.
DataIn/Out(DQ0- DQ7).
Datais writtento orread
from the M28LV16 through the I/O pins.
Write Enable (W).
TheWrite Enableinput controls
the writing of data to the M28LV16.
Ready/Busy (RB).
Ready/Busy is an open drain
output that can be used to detect the end of the
internalwrite cycle.
It is offered only withthe TSOP28 package. The
reader should refer to the M28LV17 datasheet
for more information about the Ready/Busy
function.
OPERATION
In orderto prevent datacorruption andinadvertent
write operations during power-up, a Power On
Reset(POR)circuitresetsallinternalprogramming
cicuitry. Access to the memory in write mode is
allowed after apower-up as specifiedin Table7.
Read
The M28LV16isaccessedlike astaticRAM. When
E and G are low with W high, the data addressed
is presentedon the I/O pins. The I/Opins are high
impedance when either G or E is high.
Write
Write operations are initiated when both W and E
are low and G is high.TheM28LV16 supports both
E and W controlled write cycles. The Address is
latched by the falling edge of E or W which ever
occurs last and the Data on the rising edgeof E or
W which ever occurs first. Once initiated the write
operationis internallytimed until completion.
3/17
M28LV16
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