参数资料
型号: M28W160BT856T
厂商: 意法半导体
英文描述: 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
中文描述: 16兆位(1兆x16插槽,引导块)3V电源快闪记忆体
文件页数: 15/45页
文件大小: 343K
代理商: M28W160BT856T
15/45
M28W160BT, M28W160BB
Table 6. Program, Erase Times and Program/Erase Endurance Cycles
Parameter
Test Conditions
M28W160B
Unit
Min
Typ
Max
Word Program
V
PP
= V
DD
10
200
μs
Double Word Program
V
PP
= 12V ±5%
10
200
μs
Main Block Program
V
PP
= 12V ±5%
0.16
5
s
V
PP
= V
DD
0.32
5
s
Parameter Block Program
V
PP
= 12V ±5%
0.02
4
s
V
PP
= V
DD
0.04
4
s
Main Block Erase
V
PP
= 12V ±5%
1
10
s
V
PP
= V
DD
1
10
s
Parameter Block Erase
V
PP
= 12V ±5%
0.8
10
s
V
PP
= V
DD
0.8
10
s
Program/Erase Cycles (per Block)
100,000
cycles
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